Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

Shi, Lei; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, Alexander; Nihtianov, Stoyan

doi:10.1016/j.proeng.2010.09.189

Cited by 32 publications

(45 citation statements)

References 7 publications

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“…In conclusion, it has been shown that, based on the presented results, the CVD behavior of boron on silicon from diborane to form PureB layers can be understood in terms of the detailed reaction mechanisms involving BH 3 and H reactions with either Si or B surfaces. Desorption of H from surface bonds is essential for obtaining smooth layers with high deposition rates.…”

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confidence: 70%

“…This value is determined by the actual BH 3 reactions with Si and B surface sites. All in all, it can be concluded that the boron deposition occurs through four main mechanisms: (a) direct B deposition by decomposition of BH 3 The comparison between H 2 and N 2 carrier gases given in Fig. 2 shows that the presence of H 2 is inhibiting the deposition, i.e., the reactions (R3)-(R10) are suppressed in the forward direction.…”

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confidence: 93%

“…1 Particularly impressive performance has been achieved for the application to bulk-Si photodiodes for detecting low penetration-depth beams. [2][3][4][5] Ideal diode characteristics have been achieved for deposition temperatures in the 400 C-700 C range. The option of depositing at temperatures below $500 C, which together with the fact that the deposition is conformal and highly selective to Si, makes PureB technology highly compatible with amorphous-/polysilicon-/ crystalline-silicon thin-film device processing.…”

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confidence: 99%

“…[11][12][13][14] The possible gas-phase chemical reactions are very complex and include the formation of several high-order boranes (B 3 H 7 , B 4 H 10 , and B 5 H 11 ). The work of Fehlner et al, [15][16][17][18] Baylis et al, 19 and Mappes et al 20 specifically investigated the formation of solid boron from diborane and concluded that the dominant boron hydride gas-phase species is BH 3 . Modeling studies of the intentional doping of Si thin films, using B 2 H 6 as a dopant source gas, have also indicated that the primary gas-phase reaction pathways are the decomposition of B 2 H 6 to BH 3 (2012) unimolecular decomposition and recombination reactions are the energetically favorable reaction pathways 24,26 B 2 H 6 ðgÞ !…”

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confidence: 99%

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Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

2012

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Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350 C to 850 C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified to be related to the dominance of specific chemical reaction mechanisms. Activation energies in H 2 are found to be 28 kcal/mol below 400 C and 6.5 kcal/mol from 400 C to 700 C. In N 2 , the value decreases to 2.1 kcal/mol for all temperatures below 700 C. The rate of hydrogen desorption is decisive for this behavior. Pure boron (PureB) layer depositions have in recent years been applied for creating the p þ -region of extremely shallow, less than 10-nm deep, silicon p þ n junction diodes for a number of leading-edge device applications. 1 Particularly impressive performance has been achieved for the application to bulk-Si photodiodes for detecting low penetration-depth beams. [2][3][4][5] Ideal diode characteristics have been achieved for deposition temperatures in the 400 C-700 C range. The option of depositing at temperatures below $500 C, which together with the fact that the deposition is conformal and highly selective to Si, makes PureB technology highly compatible with amorphous-/polysilicon-/ crystalline-silicon thin-film device processing. Moreover, these properties also make it an attractive process for creating junctions on silicon nanowires and advanced CMOS (complementary metal-oxide-semiconductor) transistors including source/drain in p-type FinFETs. 6,7 These applications require a sub-3-nm thick layer to avoid excess series resistance through the high-resistivity PureB layer.In the present work, the deposition is performed in a commercial Si/SiGe epitaxial reactor by exposing the Si surface to diborane (B 2 H 6 ). At 700 C, in the first few seconds of exposure, the boron atoms interact with the Si surface sites to quickly build up something like an atomic layer plane, and upon further deposition, the boron coverage readily exceeds one monolayer (1 ML). After this, the boron atoms will be deposited on a full PureB surface, which is a process that has a much slower, well-controlled deposition rate. In the past, it has been shown that less than 2-nm-thick layers can be deposited with good reliability and uniformity by a suitable adjustment of deposition parameters such as deposition time, temperature, partial pressures, and flow rates. 8 In this paper, an investigation is presented of the surface reaction mechanisms and activation energies of PureB layer deposition in the temperature range of 350 C to 850 C. At the lower temperatures, the carrier gas has a large influence on the ability to create the first full boron coverage of the Si. Nevertheless, by first creating a full PureB coverage at 700 C, which is smooth and uniform, and then proceeding with the low-temperature depositions, the boron-on-boron activation energies could be determined over the whole temp...

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confidence: 93%

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Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

2012

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“…Here only second stage is modeled. Under these assumptions, the total surface B flux can be expressed as 3 at PureB surfaces (13). Also η is a unit less constant.…”

Section: Analytical Kinetic Modelmentioning

confidence: 99%

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

et al. 2013

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In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B 2 H 6 ) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 ºC in these two different ASM CVD reactors.

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Advanced silicon radiation detectors in the vacuum ultraviolet and the extreme ultraviolet spectral range

Gottwald¹,

Scholze²

2018

Smart Sensors and MEMs

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Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

Cited by 32 publications

References 7 publications

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

Advanced silicon radiation detectors in the vacuum ultraviolet and the extreme ultraviolet spectral range

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