Optical pattern formation in a-SiC:H films by Ga+ ion implantation

Bischoff, L.; Teichert, J.; Kitova, S.

doi:10.1016/s0042-207x(02)00309-3

Cited by 17 publications

(13 citation statements)

References 7 publications

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“…This method is of par- The use of gallium as the ion implanted species is particularly attractive since it is available in standard FIB machines, and in addition has been shown to be capable of generating large optical contrasts [14,15]. The fact that Ga has a very low melting point (T m = 29.80…”

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confidence: 99%

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams

et al. 2013

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This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) lms. Wide bandgap a-SiC:H samples, Ga + focused ion beam implanted, have been prepared. A range of samples has been focused ion beam patterned under dierent implantation conditions, with emphasis on dierent substrate temperatures (typically from 0• C temperature to around room temperature). Some of the room temperature implanted samples were further annealed at +250• C in vacuum. The focused ion beam patterned samples were then analysed using near-eld techniques, like atomic force microscopy, to dene optimum implantation conditions and the resulting consequences for archival data storage applications. The atomic force microscopy analysis of Ga + focused ion beam implanted a-Si1−xCx:H samples at room temperature and at 0• C revealed an increase of both the depth and the width of the individual lines within the focused ion beam written patterns at the lower temperature, as a result of an increased ion beam induced sputtering yield, in good agreement with the previous results for the case of Ga + broad beam implantation in a-Si1−xCx:H and again suggesting that the best conditions for optical data storage for archival storage applications would be using Ga + ion implantation in a-SiC:H lms with an optimal dose at room temperatures. Similarly, the atomic force microscopy results conrm that no advantage is expected to result from post-implantation annealing treatments.

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confidence: 99%

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams

et al. 2013

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“…These properties, together with ease of fabrication and a remarkable thermal stability, make SiC a very promising candidate for various optoelectronic, photonic and other device applications (e.g., solar cells, light-emitting diodes, imaging sensors, high-power microwave devices, high-energy radiation detectors), particularly in adverse environments [3,4]. The relative immunity of SiC to environmentally induced degradation, in particular its high thermal stability (stable to temperatures in excess of 1500°C), makes it attractive for data storage applications, and promising results have been achieved by using ion implantation to write micro-and nanoscale marks in SiC films [5][6][7][8][9][10][11].…”

Section: Nanoscale Optical Patterning Of Amorphous Silicon Carbide Fimentioning

confidence: 99%

“…Several ion-implanted species have already been investigated for the modification of the optical properties of a-SiC:H thin films, including Ar + , ions of group IV elements [5,[7][8][9] and, most recently, Ga + . The use of gallium is attractive since it is available in standard FIB machines and in addition has been shown to be capable of generating large optical contrasts [6]. Investigations were carried out further in order to study the structural and chemical bonding modifications of thin a-SiC:H films when using high-dose Ga + ion implantation, resulting in considerable changes of the optical band gap and the electronic properties of the material [6,7].…”

Section: Ga + Ion Beam-induced Optical Contrast In Amorphous Silicon mentioning

confidence: 99%

“…The particular attention that has been focused on Ga + as the implant species is due to the fact of its widespread use in FIB systems. Computer-generated Ga + FIB pattern in an a-SiC:H film is demonstrated in Figure 5 [6]. The figure represents an optical micrograph of an a-SiC:H thin film with a variety of Ga + FIB-created patterns.…”

Section: Ga + -Focused Ion Beam Patterning Of Amorphous Silicon Carbidementioning

confidence: 99%

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Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving

Tsvetkova

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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The work presented here is related to some developments in providing a new generation ultrastable (>100 years), ultrahigh density (>1 Tbit/sq.in.) data storage materials for archival applications. The chosen material to write nanoscale data by finely focused ion beams is hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H has been chosen for its appropriate optical, chemical and mechanical properties. Ga + was prefered as the implant species for the focused ion beam (FIB) implantation due to its widespread uses in FIB equipment and its modifying effects on the amorphous silicon carbide target. A range of a-SiC:H film samples have been FIB patterned under different implantation conditions for this study. The emphasis in these investigations was the influence of different substrate temperatures on the patterning process. The effects of further annealing of room temperature implanted samples were also studied. The FIB patterned samples under different conditions were analysed using near-field techniques, like atomic force microscopy (AFM), to define optimum implantation parameters for archival data storage applications. Using the established optimal conditions for the FIB patterning process of a-SiC:H films, it is expected to achieve the aimed ultrahigh density and stability with this novel data storage method for archival applications.

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“…In both cases, huge increases in optical absorption coefficients were noted as compared to previous experiments with As + , indicating that the formation of optical contrast was much more prevalent. Although strong in both cases, this effect was even greater in the GD films as compared to the SP films [31].…”

Section: Materials Characterization and Alterationmentioning

confidence: 81%

Focused Ion Beam System—a Multifunctional Tool for Nanotechnology

Yao

Handbook of Microscopy for Nanotechnology

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Optical pattern formation in a-SiC:H films by Ga+ ion implantation

Cited by 17 publications

References 7 publications

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams

Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving

Focused Ion Beam System—a Multifunctional Tool for Nanotechnology

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Optical pattern formation in a-SiC:H films by Ga+ ion implantation

Cited by 17 publications

References 7 publications

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga+Focused Ion Beams

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga+Focused Ion Beams

Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving

Focused Ion Beam System—a Multifunctional Tool for Nanotechnology

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Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams

Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by Ga⁺Focused Ion Beams