Optical parameters of InP-based waveguides

Fiedler, F.; Schlachetzki, A.

doi:10.1016/0038-1101(87)90032-3

Cited by 93 publications

(23 citation statements)

References 49 publications

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“…where PV is the principle value of the integral and the change of material absorption Δα (N,E ' ) is determined using the band structure and material parameters [17,18]. We calculate the index changes of each layer, then taking into account of all the index changes [19] and get the dependence of photon energy of the pump laser and the effective index changes of the whole structure.…”

Section: Resultsmentioning

confidence: 99%

Blue shift of laser mode in photonic crystal microcavity

et al. 2014

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We report the first demonstration of blue shift of optical pumping photonic crystal (PhC) laser. A femtosecond laser was used to pump the InGaAsP based two dimensional photonic crystal laser at room temperature. Linear dependence of the resonance wavelength with respect to the pump power is observed: dλ/dP=-1.5×10 -2 nm/μW . Blue shift of overall 1.1nm was obtained with the increase power of pump laser. These results are in agreement with theoretical expectation while the carrier-induced index change is introduced into the PhC semiconductor laser. It shows a possibility that by proper wafer design and careful optimization, we may obtain wavelength stable photonic crystal laser, which is important in photonic integration.

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Section: Resultsmentioning

confidence: 99%

Blue shift of laser mode in photonic crystal microcavity

et al. 2014

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“…Since this effect is largely controlled by n-type carriers at these concentration levels, this drop is largely eliminated by already incorporating a moderate level of n-type dopant in this area. Incorporation of this dopant should also help suppress the ingress of p-type carriers into the middle region of the device capable of causing high absorption [20], [35]- [37].…”

Section: A Device Conceptmentioning

confidence: 98%

“…The refractive indexes n and absorption coefficients β of these different areas are shown in Table I both with and without a forward injected plasma injected across the middle region of the diode [19], [20], [35]- [37]. The optical coefficients were calculated for the p-i-n diode shown in Fig.…”

Section: A P-i-n Diode Optical Coefficientsmentioning

confidence: 99%

Feasibility Assessment and Analysis of a Forward Injected Photonic Crystal Device

Tinker

Cui

Lee

2009

IEEE Trans. Nanotechnology

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A forward injected photonic crystal device design has been proposed for the purpose of injecting a high carrier concentration across the intrinsic region of a p-i-n diode formed across the waveguide of a photonic crystal in order to modulate the refractive index of the waveguide and generate a highly compact optical device. A numerical model was developed and evaluated both to assess the feasibility of this particular approach and to optimize the design. Carrier concentrations as high as 5.5 × 10 17 cm −3 were injected across the intrinsic region of a p-i-n diode formed across the waveguide of an InP photonic crystal slab by highly forward biasing the device. This level of injection was capable of causing a negative shift in the refractive index of approximately −0.004 with response times of around 1 ns. The refractive indexes and absorption coefficients generated during this analysis were then applied to a photonic crystal waveguide in order to assess the feasibility of developing a compact optical device using a strongly forward injected p-i-n diode.Index Terms-Electooptic devices, optical modulation, optical planar waveguides, optical propagation in plasma media, p-i-n diodes.

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“…In order to estimate the phase mismatch accurately, a precise knowledge of the refractive indices is critical at pump, signal, and idler wavelengths. While the index of InGaAsP lattice matched to InP is well known at 1.55 μm [16][17][18][19][20], to date only one publication deals with its measurement at longer wavelengths [21], and none exists at 3 μm. This makes it crucial to accurately characterize its refractive index up to 3.14 μm, outside of the scope covered by literature data.…”

Section: Introductionmentioning

confidence: 99%

Widely Tunable Quantum-Dot Source Around 3 μm

Bernard¹,

Ravaro

Gérard³

et al. 2017

Quantum-Dot Based Light-Emitting Diodes

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We propose a widely tunable parametric source in the 3 μm range, based on intracavity spontaneous parametric down conversion (SPDC) of a quantum-dot (QD) laser emitting at 1.55 μm into signal and idler modes around 3.11 μm. To compensate for material dispersion, we engineer the laser structure to emit in a higher-order transverse mode of the waveguide. The width of the latter is used as a degree of freedom to reach phase matching in narrow, deeply etched ridges, where the in-plane confinement of the QDs avoids nonradiative sidewall electron-hole recombination. Since this design depends critically on the knowledge of the refractive index of In 1−x Ga x As y P 1−y lattice matched to InP at wavelengths where no data are available in the literature, we have accurately determined them as a function of wavelength (λ = 1.55, 2.12 and 3 μm) and arsenic molar fraction (y = 0.55, 0.7 and 0.72) with a precision of ±4 × 10 −3. A pair of dichroic dielectric mirrors on the waveguide facets is shown to result in a continuous-wave optical parametric oscillator (OPO), with a threshold around 60 mW. Emission is tunable over hundreds of nanometers and expected to achieve mW levels.

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Optical parameters of InP-based waveguides

Cited by 93 publications

References 49 publications

Blue shift of laser mode in photonic crystal microcavity

Blue shift of laser mode in photonic crystal microcavity

Feasibility Assessment and Analysis of a Forward Injected Photonic Crystal Device

Widely Tunable Quantum-Dot Source Around 3 μm

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