“…6,15 The measured radiative lifetime of about 50 ps is in agreement with a bipolariton model suggested by Ivanov et al 16 The acousticphonon scattering was assigned to phonon absorption. In CdSe the induced exciton-biexciton transition was investigated by FWM, 5,17 showing a dephasing time of 20 ps and an acoustic-phonon scattering with an activation energy given by the biexciton binding energy. In quasi-two-dimensional GaAs structures, the giant oscillator strength model gives comparable radiative decay rates for excitons and biexcitons, 18,19 while the bipolariton model 20,21 predicts a fast decay of biexcitons into interface polaritons.…”