Optical Modeling-Assisted Characterization of Polymer:Fullerene Photodiodes

Abstract

In this paper, the practical viability of an organic bulk heterojunction (BHJ)based photodiode is studied, including the analysis of dark current density (J d in A/cm 2 ), external quantum efficiency (EQE in percent), responsivity (R in A/W), noise-equivalent power (in W/Hz 1=2 ), and specific detectivity (Jones in cmHz 1=2 =W). The dark current was minimized down to 90 pA/cm 2 in P3HT : PC 60 BM BHJ photodiodes by increasing the thickness, whereas the EQE maintained high values. The measured noise current was 2:20

Flexible narrowband organic photodiode with high selectivity in color detection

“…Figure 3(a) shows the dark current density of the devices between −1.0 and 1.0 V. The dark current density decreased as the active layer thickness increased; the dark current density of the device with the 250 nm thick layer was three orders of magnitude lower than that of the device with the 75 nm thick layer. The decrease of dark current density with increasing active layer thickness can be attributed to the higher shunt-resistance of the thicker layers [37,39]. However, there was no apparent correlation between the thickness of the active layer and the wavelength-dependent OPD performance, such as EQE, spectral response range (the range where the responsivity is over 0.01 A W −1 ), and FWHM.…”