Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance

Silberstein, R. P.; Lyden, Joseph K.; Tomkiewicz, Micha; Pollak, Fred H.

doi:10.1116/1.571028

Cited by 18 publications

(9 citation statements)

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“…The photoelectrochemical measurements were recorded with a standard setup as described elsewhere (21).…”

Section: Methodsmentioning

confidence: 99%

“…The EER spectra were measured in situ using apparatus described elsewhere (21). The photoelectrochemical measurements were recorded with a standard setup which was also described elsewhere (22).…”

Section: Methodsmentioning

confidence: 99%

“…The impedance measurements were carried out, using the previously described (20) technique of relaxation spectrum analysis. The photoelectrochemical measurements were recorded with a standard setup as described elsewhere (21).…”

Section: Methodsmentioning

confidence: 99%

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Electrolyte Electroreflectance Study of Surface Optimization of n ‐ CuInSe2 in Photoelectrochemical Solar Cells

Shen

Siripala

Tomkiewicz

1986

J. Electrochem. Soc.

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Electrolyte electrorefiectance is used to show that the main effect of BrJMeOH etching of CuInSe2 is to remove the pinning of the Fermi level, which is due to a monolayer of states located 0.17V positive to the potential of the solution. The flatband potential of CuInSe2 in polysulfide solution was found to be -0.62V vs. the solution potential, while in polyiodide solution it is shifted to -0.7OV vs. the potential of that solution. This shift can explain some of the improvement in performance in polyiodide compared to polysulfide. The bandgap of CuInSe~ was found to be a direct transition at 1.01 eV with a three-dimensional critical point.

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“…The photoelectrochemical measurements were recorded with a standard setup as described elsewhere (21).…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Electrolyte Electroreflectance Study of Surface Optimization of n ‐ CuInSe2 in Photoelectrochemical Solar Cells

Shen

Siripala

Tomkiewicz

1986

J. Electrochem. Soc.

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“…The EER spectra were measured in situ in the PEC cell configuration using apparatus described elsewhere (5). A PAR Model 173 potentiostat was used to operate the cell in the potentiostatic mode during photoetching.…”

Section: Methodsmentioning

confidence: 99%

“…The changes in some of these parameters due to photoetching and the variations of the position of the bandedges with electrode potential are determined. The use of EER is then quantified to determine the degree of Fermi level pinning (5). The Fermi level pinning is correlated with a quantitative description of the surface states that give rise to the pinning, and those findings are correlated with some of the dynamic performance characteristics of CdIneSe4 crystals.…”

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confidence: 99%

Electrolyte Electroreflectance of Single‐Crystal CdIn2Se4 in a Photoelectrochemical Solar Cell

Tomkiewicz

Siripala

Tenne

1984

J. Electrochem. Soc.

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Electroreflectance was used to evaluate the optical properties of CdIn2Se4 in polysulfide solution, before and after photoetching. The variations of signal intensity with electrode potential were used to trace the band position as a function of potential. It was found that the optical transition fits a three‐dimensional parabolic model of the density of states, with direct transition at 1.825 eV. When the crystal is photoetched, there is a shift of 98° in the phase factor and a decrease in the broadening parameter from 0.42 to 0.32 eV. By monitoring the signal intensity with potential, it was shown that, irrespective of photoetching, the Fermi level is pinned as reverse bias conditions are approached. The pinning is ascribed to surface states that most likely originate from the adsorption of the electrolyte. The variation of the flatband potential with electrode potentials was calculated and was determined to occur because of the changes in the potential of the Helmholtz layer; the energy distribution and the density of states, which are responsible for those changes in potential of the Helmholtz layer, were also calculated.

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Electroreflectance at the semiconductor/electrolyte interface. A comparison of theory and experiment for n‐GaAs

Abrantes

Peat

Peter

et al. 1987

Ber Bunsenges Phys Chem

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The electroreflectance spectra of GaAs in a number of different electrolytes have been measured in the neighbourhood of the E0 transition. The spectra have been found to exhibit appreciable differences suggestive of changes in the potential distribution in the depletion layer. In one case, that of n‐GaAs in 0.1 M KOH, a detailed analysis has been carried out of lie electroreflectance spectrum using an intermediate field model and incorporating a linear field distribution within the depletion layer. A good fit to the experimental data is obtained from this model and it is found that about 70% of the potential change at the interface is accomodated across the depletion layer.

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Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance

Cited by 18 publications

References 0 publications

Electrolyte Electroreflectance Study of Surface Optimization of n ‐ CuInSe2 in Photoelectrochemical Solar Cells

Electrolyte Electroreflectance Study of Surface Optimization of n ‐ CuInSe2 in Photoelectrochemical Solar Cells

Electrolyte Electroreflectance of Single‐Crystal CdIn2Se4 in a Photoelectrochemical Solar Cell

Electroreflectance at the semiconductor/electrolyte interface. A comparison of theory and experiment for n‐GaAs

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