Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes

Kim, Chang Zoo; Choi, Je Hyuk; Song, Kwang Hyun; Shin, Cheung Soo; Ko, Chul Gi; Kim, Hogyoung

doi:10.3938/jkps.62.1301

Cited by 4 publications

(5 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At the edge and the corner, E2 is much lower than the confinement energy, 76 meV and 67 meV, similar to the work done by Kim et al [17]. In this case, the major loss mechanism is attributed to recombination centers in the Al-containing layer (barriers or interface) associated with Al-O complexes [17], [18]. By analogy, we can conclude that a thermal emission of carriers out of the wells is excluded at the edges and it is very likely that sidewall defects are responsible for non-radiative recombinations instead of native defects at the well/barrier interface.…”

Section: Resultssupporting

confidence: 88%

“…with 309 meV is in the same order of magnitude than the confinement energy in our quantum wells structure, suggesting that the major losses at the center are dominated by thermal emission [19]. At the edge and the corner, E2 is much lower than the confinement energy, 76 meV and 67 meV, similar to the work done by Kim et al [17]. In this case, the major loss mechanism is attributed to recombination centers in the Al-containing layer (barriers or interface) associated with Al-O complexes [17], [18].…”

Section: Resultssupporting

confidence: 87%

“…While decreasing the temperature, the spectra in the two locations exhibit a similar behavior. The peak position shifts towards high energies (short wavelengths) due to the band gap shrinkage with temperature [17]. 3 where a third point from the edge is also represented.…”

Section: Resultsmentioning

confidence: 99%

“…The Arrhenius behavior shown in the Figure 4. b) can be fitted using equation ( 1) [17], that describes two non-radiative processes E1 and E2 for low and high temperature, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The activation energy at high temperature (> 60K) E2 is related to the confinement of the electron-hole pair in the quantum wells. In the case of AlGaInP quantum wells, Michler et al [21] followed by others studies [15], [17], [22] consider E2 as equal to one-half of the total confinement energy. For Daly and Glynn [19] and Fang et al [20] this energy is equal to the total confinement.…”

Section: Resultsmentioning

confidence: 99%

See 4 more Smart Citations

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

View full text Add to dashboard Cite

Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.

show abstract

Section: Resultssupporting

confidence: 88%

Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

“…The Arrhenius behavior shown in the Figure 4. b) can be fitted using equation ( 1) [17], that describes two non-radiative processes E1 and E2 for low and high temperature, respectively.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

View full text Add to dashboard Cite

show abstract

Structural and Optical Characteristics of Nanoscale Semiconductor Lasers for Telecommunication and Biomedical Applications: A Review

Vijay

Singh

Soni

et al. 2019

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

This paper presents the structural and optical characteristics of nanoscale semiconductor lasers for telecommunication and biomedical applications. Improved fabrication techniques, new materials and nano-scale heterostructures have led to improvement in the device performance. The material selection and their bandgap have an important role in the heterostructure to generate a lasing wavelength for particular applications. The bandgap modification can be done by the use of alloy semiconductor, quantum well structure, and strain layer epitaxy without changing the material itself. Semiconductor multilayers on the substrate are generally grown by using the metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) process. Many researchers have provided different designs of heterostructures for the lasers. Generally, lasers are manufactured by using different semiconductor layers grown on GaAs, InP or GaSb substrate at the nanoscale. But controlling the thickness of the layer grown on the substrate at the nanoscale is the major problem in the fabrication. In a study, it has been found that for the proper functioning of semiconductor lasers it is beneficial to have light conduction and valence band masses. By using band structure engineering theory of quantum confinement and incorporation of strain on the active layer, this problem can be resolved. Red lasers are currently used in biomedical applications for treatment of superficial skin diseases like psoriasis, vitiligo etc. The manufacturing of red laser was earlier done by using nitrides material but they are harmful to skin and are expensive as well. An alternative for designing of red laser is manufacturing red lasers by using phosphides. The red laser is manufactured by using GaInP and AlGaInP ternary and quaternary compounds are widely used in the biomedical industry currently. This paper is the outcomes of the papers presented by many researchers in the field of optoelectronics.

show abstract

Orientation dependent performance of 635nm vertical cavity surface emitting QW red laser

Islam

Sarker

Hasan

2015

2015 2nd International Conference on Electrical Information and Communication Technologies (EICT)

View full text Add to dashboard Cite

Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes

Cited by 4 publications

References 32 publications

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Structural and Optical Characteristics of Nanoscale Semiconductor Lasers for Telecommunication and Biomedical Applications: A Review

Orientation dependent performance of 635nm vertical cavity surface emitting QW red laser

Contact Info

Product

Resources

About