Optical Investigation of Different Silicon Films

Abstract

In the case of weak absorption, the spectral reflectance of a thin film on a nonabsorbing substrate can be used to determine the spectral dependence of the absorption constant. For this purpose, a relatively simple method is described evaluating the envelopes of the interference extrema. This method as well as a Kramers-Kronig analysis were applied to epitaxial, polycrystalline, and amorphous silicon films in the energy range 0.5-5.5 eV. With decreasing crystal quality, changes in the spectral dependence of the optical constants of these films are observed. This can be understood in terms of a decreasing long range order. * Electrochemical Society Active Member.

Method to determine the quality of sapphire

“…Kiihl et al [14] have shown differences in the optical constants of epitaxial, polycrystalline , and amorphous silicon in the energy range 0.5 to 5.5 eV.…”

“…Correlation of SOS device channel current with infrared reflectance data for corresponding sapphire substrates 12 Figure 6. Correlation of gated-Hall mobility of SOS structures with infrared reflectance data of corresponding sapphire substrates 13 Figure 7. Correlation of SOS device channel current with ultraviolet reflectance data for corresponding epitaxial silicon films 14 Figure 8. Correlation of gated-Hall mobility of SOS structures with ultraviolet reflectance data of corresponding epitaxial silicon films 15 Figure 9.…”