Optical interferometry for surface measurements of CMP pads

Stein, David J.; Hetherington, Dale L.; Dugger, M.T.; Stout, Tom

doi:10.1007/bf02655586

Cited by 88 publications

(70 citation statements)

References 1 publication

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“…A key difference is that even for relatively large mean particle sizes, the second model suggests that the particle diameter standard deviation plays a significant role in MRR decay. Because the third model is dynamic, we presented a comparison of its dynamic behavior with the experimentally observed MRR decay behavior observed by Stein [10]. The model behavior was shown to be consistent with the experimental results.…”

Section: Discussionsupporting

confidence: 58%

“…The model behavior was shown to be consistent with the experimental results. Finally, it should be mentioned again that because the various models, as well as the experimental results from [10] are lacking in specific information, it was possible here to address only normalized MRR behavior. Hence, the value of this work is related to the ability to better understand how particle properties, in conjunction with various amounts of pad information, influence MRR trends.…”

Section: Discussionmentioning

confidence: 99%

“…In our previous MRR decay model [9], it was found that, by assuming inelastic contact between wafer and pad as well as the pad asperity topography evolution and suitable initial pad asperity height distribution, prediction of MRR was notably improved, as measured relative to the experimental results of Stein et al [10]. All of the works referenced above considered MRR in relation to direct contact between the pad and the wafer.…”

Section: Introductionmentioning

confidence: 93%

“…For this reason, since Figure 3 includes normalized MRR values, it is not necessary to specify particle statistics. To assess the reasonability of the trend shown in Figure 3, we include Figure 4, which is an experimental measurement of MRR decay over time given by Stein [10]. A comparison of Figures 3 and 4 shows that the overall decay trends are similar.…”

Section: Mrr Model With Varying Height Pad Asperities (Based On Modelmentioning

confidence: 99%

“…A comparison of Figures 3 and 4 shows that the overall decay trends are similar. Since no particle information is provided in [10] and the MRR in Figure 3 is normalized, a direct comparison of these figures is not appropriate. However, one can observe that the relative rates of decay are similar.…”

Section: Mrr Model With Varying Height Pad Asperities (Based On Modelmentioning

confidence: 99%

See 4 more Smart Citations

Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization

et al. 2005

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The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of active particles is computed. Both assume that pad asperities are identical and nonrandom. The third is dynamic in accommodating changing pad properties. For larger mean particle size (diameter), the role of the standard deviation of particle size distribution is uncertain. The dynamic behavior of the third model is compared with experimental observations.

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Section: Discussionsupporting

confidence: 58%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

Section: Mrr Model With Varying Height Pad Asperities (Based On Modelmentioning

confidence: 99%

Section: Mrr Model With Varying Height Pad Asperities (Based On Modelmentioning

confidence: 99%

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Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization

et al. 2005

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Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Chemical Mechanical Polishing

성홍석¹

2021

Wafer Manufacturing

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The purpose of this thesis is to explore control schemes for application to the Chemical-Mechanical Polishing (CMP) semiconductor fabrication process. Particular emphasis is placed on an Exponentially Weighted Moving Average (EWMA) controller, a Predictor-Corrector Controller (PCC), and Artificial Neural Network (ANN) controllers. These methods are explored with respect to their stability, responsiveness (optimal or otherwise), ability to incorporate practical issues and their applicability to the CMP process. These characteristics are evaluated through simulation and experiments performed on various CMP tools which highlight and demonstrate these principles.

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Optical interferometry for surface measurements of CMP pads

Cited by 88 publications

References 1 publication

Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization

Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization

Pads for IC CMP

Chemical Mechanical Polishing

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