2012
DOI: 10.1364/oe.20.029076
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Optical instability and self-pulsing in silicon nitride whispering gallery resonators

Abstract: We report time domain observations of optical instability in high Q silicon nitride whispering gallery disk resonators. At low laser power the transmitted optical power through the disk looks chaotic. At higher power, the optical output settles into a stable self-pulsing regime with periodicity ranging from hundreds of milliseconds to hundreds of seconds. This phenomenon is explained by the interplay between a fast thermo-optic nonlinearity within the disk and a slow thermo-mechanic nonlinearity of the structu… Show more

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Cited by 56 publications
(54 citation statements)
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“…The period of the pulsation is of the order of microsecond, much smaller than that in previous reports of mechanical movement involved SSP on silicon nitride microdisks (of the order of second) (Ref. 31), and PMMA-coated silica microtoroids (of the order of millisecond) (Ref. 32).…”
Section: Experimental Settings and Observationsmentioning
confidence: 65%
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“…The period of the pulsation is of the order of microsecond, much smaller than that in previous reports of mechanical movement involved SSP on silicon nitride microdisks (of the order of second) (Ref. 31), and PMMA-coated silica microtoroids (of the order of millisecond) (Ref. 32).…”
Section: Experimental Settings and Observationsmentioning
confidence: 65%
“…32 Generally, the SSPs in silica or silica/polymer microcavities have relatively small frequencies, usually at the Hz or kHz level. [30][31][32] In this work, we report SSP in a polymer microsphere on a silicon chip, excited by a fixed-frequency continuous laser, with a MHz-level oscillation frequency, much faster than previously reported silica or silica/polymer microcavities. A theoretical model is built to interpret the physical origin of the SSP, based on the thermal and optical dynamics of the cavity, by taking into account the modification of the thermal expansion coefficient and the temperature distribution within the mode volume.…”
Section: Introductionmentioning
confidence: 64%
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“…27,28 Si 3 N 4 is a desirable material for optical sensing due to its CMOS compatibility, 29 transparency to visible light, and lower refractive index than silicon resulting in less mode confinement. 30 Si 3 N 4 refractometric sensors have been described previously in optical ring and slot geometries, 23,25,31 and with optimization have achieved sensitivities of 246 nm/RIU and detection limits of 5 × 10 −6 RIU.…”
mentioning
confidence: 99%