2011
DOI: 10.1002/anie.201105217
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Optical Imaging of CdSe Nanowires with Nanoscale Resolution

Abstract: Down to the wire: High‐resolution photoluminescence (PL) and Raman images of CdSe nanowires were obtained using tip‐enhanced near‐field optical microscopy. They show that the optical properties of the CdSe nanowires vary significantly within a few nanometers leading to strong spatial fluctuations in both PL intensities and energies (see picture).

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Cited by 38 publications
(31 citation statements)
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“…Marquestaut et al studied isolated GaN nanowires, and reported that the near-field enhancement factor depends on the symmetry of the specific vibrational mode [103]. Böhmler et al were able to image single CdSe nanowires using tip-enhanced Raman and PL spectroscopy, thus differentiating the PL energy emission of nanowires with different diameters [104]. Finally, Ogawa et al reported a nanoscale TERS mapping of a single Ge nanowire, and estimated the fraction of crystalline and amorphous content of Ge [105].…”
Section: -D Materialsmentioning
confidence: 99%
“…Marquestaut et al studied isolated GaN nanowires, and reported that the near-field enhancement factor depends on the symmetry of the specific vibrational mode [103]. Böhmler et al were able to image single CdSe nanowires using tip-enhanced Raman and PL spectroscopy, thus differentiating the PL energy emission of nanowires with different diameters [104]. Finally, Ogawa et al reported a nanoscale TERS mapping of a single Ge nanowire, and estimated the fraction of crystalline and amorphous content of Ge [105].…”
Section: -D Materialsmentioning
confidence: 99%
“…Controlling polarization on the silicon surface in order to get rid of the background noise from the confocal volume has also been demonstrated and resulted in improved TERS quality [135][136][137]. Other semiconductor materials like GaN [138,139], Ge-, CdSe-nanowire [140,141] have also been probed by TERS. At spatial resolution b 35 nm, variations in crystalline properties were observed, and for semiconductor nanowires, local mapping of the chemical composition, strain, and charge distribution were done.…”
Section: Semiconductor Materialsmentioning
confidence: 99%
“…Under optimized conditions the illuminated tip acts as an antenna that confines the incident electric field around the tip-apex, thus providing a nanoscale light source for high-resolution imaging. Depending on the wavelength of the incident photons and by analyzing the scattered light with a spectrometer system, sample properties in the visible [9][10][11][12][13][14][15], IR [16][17][18][19][20], and THz [21][22][23][24][25][26] regime can be investigated with the additional benefit of a significantly improved spatial resolution. For wavelengths in the IR regime this technique has already been applied to many different sample systems, e.g.…”
Section: Introductionmentioning
confidence: 99%