Optical grating and THz polarizer based on normal grade single crystal diamond fast fabricated by fs laser

Lin, Bin; Song, Qi; Pang, Dongqing; Liu, Bowen; Kong, Weipeng; Li, Zeyu; Qin, Yu; Hu, Minglie

doi:10.1016/j.infrared.2021.103703

Cited by 5 publications

(4 citation statements)

References 23 publications

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“…Once the scalability, repeatability and controllability of preparation and processing methods of LIPSS has settled down, the correlation between the specific surface chemistry and topography will be conclusively established in the finished product. These will supply more drawings for applications of WBS and dielectric materials for which surface functionalization is one of the most important features (e.g., catalysts [109], nano and micro-electronics [110], bio-sensing [111], energy conversion [60,112], electrochemical and photoelectrochemical processes [71,113], elementary optical devices such as selective absorbers [80], THz optical components [72,114], etc. ).…”

Section: Discussionmentioning

confidence: 99%

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

Mastellone

Pace²,

Curcio

et al. 2022

Materials

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With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.

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Section: Discussionmentioning

confidence: 99%

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

Mastellone

Pace²,

Curcio

et al. 2022

Materials

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“…By using THz TDS, Ye et al demonstrated [22] the fingerprint absorption peaks and the dielectric response trends in 0.1-3.0 THz bandwidth in polycrystalline and monocrystalline diamond films grown by chemical vapor deposition (CVD). In 2021, Pang et al applied femtosecond (fs) lasers to induce single crystal to amorphous phase transformation in normal grade SCD flakes and proposed that such a technique can be used for realizing the THz modulators [23]. These results indicate that THz techniques are powerful tools in the study of diamonds.…”

Section: Introductionmentioning

confidence: 99%

Terahertz optoelectronic properties of synthetic single crystal diamond

Xiao

Zhang

et al. 2023

Diamond and Related Materials

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“…Evanescent coupling to the photodetectors is preferred as it offers low coupling losses. Recently, many such photodetectors have been studied [6][7][8][9][10][11][12][13][14][15][16]. A monolithic integrated waveguide photodetector with optical isolation between the detecting layer and the contact with responsivity of 0.55 A W −1 has been reported [7].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, many such photodetectors have been studied [6][7][8][9][10][11][12][13][14][15][16]. A monolithic integrated waveguide photodetector with optical isolation between the detecting layer and the contact with responsivity of 0.55 A W −1 has been reported [7]. Silicon nitride waveguide integrated silicon p-i-n photodetectors on SOI platform has been proposed [8].…”

Section: Introductionmentioning

confidence: 99%

Highly efficient resonant length integrated optic photodetector

Sharma¹

2022

Eng. Res. Express

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A novel integrated optic photodetector with resonant length is theoretically proposed for detection at 1.55 μm. The structure consists of substrate/ waveguide/ phase matching layer (low index)/ absorbing semiconductor layer /air. A general mode expansion and propagation technique based on supermode analysis is used to study the propagation of modes in the device structure. Periodic coupling between the guided mode and the modes supported by the absorbing layer takes place and varies with the length of the detector. We show that resonant coupling between the two super modes takes place for the optimized thickness of the phase matching layer and the absorbing layer at a particular length of the detector which is considered the detector length. An attenuation exceeding 170 dB could be obtained for a detector length of 13 μm for TM polarization. The proposed photodetector exhibits a 3dB bandwidth exceeding 300 GHz and has capacitance of only 0.01 pF. Similar results have been obtained for TE polarization with different thickness of the absorbing layer.

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Optical grating and THz polarizer based on normal grade single crystal diamond fast fabricated by fs laser

Cited by 5 publications

References 23 publications

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

Terahertz optoelectronic properties of synthetic single crystal diamond

Highly efficient resonant length integrated optic photodetector

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