Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Kolodeznyi, E. S.; Rochas, S. S.; Kurochkin, A. S.; Babichev, A. V.; Novikov, I. I.; Gladyshev, A. G.; Karachinsky, L. Ya.; Денисов, Д. В.; Bobretsova, Yu. K.; Klimov, A. A.; Blokhin, S. A.; Voropaev, K. O.; Ionov, A. S.

doi:10.1134/s0030400x18080143

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…The active region was the stronglystrained In 0.74 Ga 0.26 As QWs of the thickness of 2.4 nm (the lattice mismatch parameter ∼ 1.4%), separated by the lattice-matched barrier In 0.53 Al 0.16 Ga 0.31 As layers. In order to increase the mode amplification by modification of the longitudinal confinement factor, the number of the wells is increased to 10, while the thickness of the barriers is decreased to 7 nm [15]. As a result, the total strain of the layers of the active region was ∼ 0.36% in relation to the InP substrate material.…”

Section: Experimental Samplesmentioning

confidence: 99%

“…In case of application of the InAlGaAs quantum wells as the active region, the maximum modulation bandwidth around 8 GHz has been achieved and the error-free data transmission for 10 km at 10 Gbit/s has been demonstrated in the NRZmodulation mode [14]. For further improvement of the laser high-speed performance we have proposed to used the active region based on the thin strained InGaAs/InAlGaAs quantum wells [15]. In terms of implementation of sharp heterointerfaces, the most preferable option is to apply the molecular beam epitaxy (MBE) technology as it ensures growth control atomically in contrast to the metallo-organic chemical vapor deposition (MOCVD) [16].…”

Section: Introductionmentioning

confidence: 99%

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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the -3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20oC. The maximum data rate at 20oC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed. Keywords: VCSEL, wafer fusion, molecular beam epitaxy, single-mode operation, high-speed performance.

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Section: Experimental Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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“…Расчет модального усиления G mod проводился аналогично [7]. На пороге лазерной генерации усиление равно сумме всех потерь [8]…”

Section: результаты и обсуждениеunclassified

Оптическое усиление в лазерных гетероструктурах с активной областью на основе короткопериодной сверхрешетки InGaAs/InGaAlAs

Карачинский¹,

Novikov²,

Babichev³

et al. 2019

Журнал Технической Физики

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An active region design based on the InGaAs/InGaAlAs superlattice for laser diodes of 1535-1565 nm spectral range was proposed and experimentally realized. It has been shown that the use of active region design based on superlattice allows increasing the modal gain at equal values of the pump current density in comparison with a common used active-region design based on a set of InGaAs quantum wells.

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“…The use of InGaAs QWs instead of InAlGaAs QWs potentially allows one to evade problems associated with the SRH nonradiative recombination of carriers. A reduced barrier thickness combined with an increase in the number of InGaAs QWs [11] provides an opportunity to maintain relatively high (compared to InAlGaAs QWs) values of factor Ŵ z in this case [8,12]. At the same time, it should be noted that the use of ternary InGaAs solid alloys instead of quaternary InAlGaAs ones necessitates a reduction in QW thickness.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface-emitting lasers

et al. 2022

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X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~+0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm-1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was 400-630 A/cm2, which is comparable to the record low values for the case of highly strained InGaAs-GaAs and InGaAsN-GaAs quantum wells in the spectral ranges of 1300 nm, respectively. Keywords: superlattice, vertical-cavity surface-emitting laser, optical gain.

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Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Cited by 10 publications

References 9 publications

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

Оптическое усиление в лазерных гетероструктурах с активной областью на основе короткопериодной сверхрешетки InGaAs/InGaAlAs

Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface-emitting lasers

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