Optical gain in CdIn2S4

Abstract

Photoluminescence measurements in the donor-acceptor band of single crystals of CdIn2S4 have displayed optical gain under high extrinsic excitation intensities of the order of 108 W/m2. Gain spectra centered around λ=765 mm have been observed yielding a maximum gain of 2.2 cm−1 at 300 K and about twice that value at 100 K. The results are correlated with kinetics measurements under varying incident intensity, showing a sharp break in the luminescence decay time at exciting intensities corresponding to the onset of gain.

Synthesis and Characterization of CdIn2S4 Nanorods by Converting CdS Nanorods via the Hydrothermal Route

“…CdIn 2 S 4 is the most studied member of the family of ternary compounds AB 2 X 4 (where A = Cd, Zn, or Hg; B = Ga, or In; X = S, Se, or Te). − As it is an important cubic spinel ternary semiconductor, much interest has been aroused in the photoelectric properties of CdIn 2 S 4 . − …”