Optical gain and related proerties of GaSbN/GaSb quantum-well laser: numerical approach

Abstract

Currently, lasers are still of ongoing interest. They are used in a large range of practical applications in our day life and across various fields. Utilizations include industry such as in cutting, welding, drilling, and engraving of various materials, in medicine such as in surgery for precise cutting and cauterization with minimal tissue damage, in ophthalmology, dentistry for removing tooth decay and reshaping dental tissues, in high-speed data transmission through optical fibers, in science and research (spectroscopy, metrology and holography) and for creating visual displays, etc. The optical gain of a laser diode is a key characteristric that exhibits the performances of lasers. In the present work, we investigated the optical gain of a strained GaSbN/GaSb quantum well laser with nitrogen concentration of 3%. This low nitrogen concentration makes our GaSbN alloy a dilute one. Our analysis focused on the impact of carrier density and quantum well width on optical gain of the laser device being studied. Additionally, we determined the relationship between quantum well width and emitted wavelength. Our numerical results indicate an effective correlation between optical gain and both carrier density and quantum well width. Furthermore, inasing the quantum well width led to a longer emitted wavelength. The laser demonstrated emission within the infrared-red spectrum.