We study the influence of the carrier-envelope offset phase of few-cycle pulses on nonperturbative resonant extreme nonlinear optics in a semiconductor. If the Rabi frequency becomes comparable to the light frequency, the different Rabi sidebands interfere around twice the laser center frequency, giving rise to a signal which strongly depends on the carrier-envelope offset phase. This signature should be measurable in GaAs samples. DOI: 10.1103/PhysRevLett.89.127401 PACS numbers: 78.47.+p, 42.50.Md, 42.65.Re The rapid development of yet shorter and shorter laser pulses [1] has now led us into a regime in which the phase between the rapidly oscillating light frequency and the electric field envelope has become a relevant quantity [2 -4]. This carrier-envelope offset (CEO) phase, , of a single few-cycle pulse can significantly influence the outcome of an experiment. It has to be distinguished from the well-known relative optical phase, i.e., the phase between two different beams or pulses.In order to fix the CEO frequency f , recent work [5,6] has, for example, used the interference of the fundamental frequency of a laser pulse, which was spectrally broadened by self-phase modulation in a (photonic crystal) fiber of a few millimeter length, with the second harmonic generated with the help of a separate crystal. In Ref. [7], the same idea was used, except for the fact that the fundamental spectrum did already cover one octave, hence no need for additional broadening. Somewhat similar to this, Ref. [8] proposed to use the interference of the third harmonic, generated at a silicon wafer surface, with the second harmonic generated in a separate crystal. All the optical nonlinearities used in these and other [9] cases are off-resonant and within the perturbative regime; i.e., an expansion in terms of nonlinear optical susceptibilities is meaningful. Furthermore, in most of these cases, the pulses have to propagate over a considerable distance within the apparatus and, hence, the difference between the phase velocity and the group velocity can change the CEO phase within the measurement setup. Currently, this is the main obstacle in measuring .A nonperturbative and, hence, distinctly different way to determine the CEO phase would be via x-ray generation in extreme nonlinear optics in atoms [1,10]. In a recent review [11] on the implications of the CEO phase on metrology [12,13], the authors state in their outlook: ''. . . If an experimental technique can be developed that is sensitive to the carrier-envelope phase and works with the direct output of a mode-locked oscillator (i.e., without that amplification that will be necessary for extreme nonlinear optics), it may in turn benefit optical-frequency synthesis because it may create a simpler technique for determining/controlling the comb offset frequency. '' In this Letter, we show that resonant extreme nonlinear optics in a solid, exemplified by carrier-wave Rabi flopping [14], shows a dependence on the CEO phase , which potentially allows one to determine . The ...