Optical Float-Zone Grown Bulk $\beta$ -Ga<sub>2</sub>O<sub>3</sub>-Based Linear MSM Array of UV-C Photodetectors

Pratiyush, Anamika Singh; Muazzam, Usman Ul; Kumar, Sandeep; Vijayakumar, P.; Ganesamoorthy, S.; Subramanian, N.; Muralidharan, R.; Nath, Digbijoy N.

doi:10.1109/lpt.2019.2913286

Cited by 39 publications

(14 citation statements)

References 28 publications

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“…A 1 × 8 linear MSM arrays based on Optical-Float-Zone grown bulk (100) oriented β-Ga 2 O 3 showed a peak responsivity of 4 A W −1 with a UV-Visible rejection ratio of ≈10 3 , a low dark current of 0.23 nA and a PDCR of ≈100. [151] PLD grown β-Ga 2 O 3 (−201) thin films on c-plane sapphire were used by Wang et al [152] to fabricate MSM PDs with Au/β-Ga 2 O 3 /Au structure. The thin films deposited at different growth temperatures showed an increase in crystallinity, atomic ratio of O/Ga and bandgap with increasing temperature.…”

Section: Msm Photodetectorsmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

235

144

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: Msm Photodetectorsmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

235

144

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“…Anamika et al. [ 37 ] reported a linear MSM PD array based on bulk β ‐Ga 2 O 3 . The PDs showed satisfactory UV photodetection performance with a peak responsivity and dark current of 4 A W −1 and 0.23 nA, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…[6] However, in practical applications some drawbacks still persist, such as the low scanning speed and poor spatial recognition of the single pixel imaging. Anamika et al [37] reported a linear MSM PD array based on bulk 𝛽-Ga 2 O 3 . The PDs showed satisfactory UV photodetection performance with a peak responsivity and dark current of 4 A W −1 and 0.23 nA, respectively.…”

Section: Introductionmentioning

confidence: 99%

Ultra‐High Performance Amorphous Ga₂O₃ Photodetector Arrays for Solar‐Blind Imaging

Qin

et al. 2021

Advanced Science

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The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga 2 O 3 via a post-annealing process. The post-annealed MSM a-Ga 2 O 3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 10 4 at 5 V. The SBPDs also show ultrahigh photo-to-dark current ratio of 3.9 × 10 7 . Additionally, the PDs demonstrate super-high specific detectivity of 3.9 × 10 16 Jones owing to the extremely low noise down to 3.5 fW Hz −1/2 , suggesting high signal-to-noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large-scale, high-uniformity 32 × 32 image sensor array based on the post-annealed a-Ga 2 O 3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga 2 O 3 PDs for applications in solar-blind imaging, environmental monitoring, artificial intelligence and machine vision.

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“…Since the 1950s, there have been various techniques employed for the growth of bulk beta phase gallium oxide. Some of the reported techniques include the floating zone method (FZ) [2,[65][66][67], the Czochralski method (CZ) [68][69][70], the Verneuil method [71,72], the edge-defined film fed growth method (EFG) [2,73,74] and the vertical Bridgman method [73,75,76]. These methods over time have been able to produce bulk β-Ga 2 O 3 crystals in various crystallographic directions: (100), (010) and (001).…”

Section: Synthesis Of Ga 2 Omentioning

confidence: 99%

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Jamwal

Kiani

2022

Nanomaterials

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Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.

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Optical Float-Zone Grown Bulk $\beta$ -Ga₂O₃-Based Linear MSM Array of UV-C Photodetectors

Cited by 39 publications

References 28 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Ultra‐High Performance Amorphous Ga₂O₃ Photodetector Arrays for Solar‐Blind Imaging

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

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Optical Float-Zone Grown Bulk $\beta$ -Ga2O3-Based Linear MSM Array of UV-C Photodetectors

Cited by 39 publications

References 28 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

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Product

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Optical Float-Zone Grown Bulk $\beta$ -Ga₂O₃-Based Linear MSM Array of UV-C Photodetectors

Ultra‐High Performance Amorphous Ga₂O₃ Photodetector Arrays for Solar‐Blind Imaging