Optical fiber static strain sensors: reliability issues

Saxena, Indu; Hui, Kaleonui J.

doi:10.1117/12.753523

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Stability Of Graphene Nano-ribbon Fet Sram Cell1

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2023

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“…We employed the test benches in ref. [ 12 ] for measurements, and the results are presented in Figure 7 . The read and write SNM are higher than when 10% edge roughness is introduced, i.e., the robustness of SRAM is reduced with LER.…”

Section: Stability Of Graphene Nano-ribbon Fet Sram Cellmentioning

confidence: 99%

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina

2023

Micromachines

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In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. Our simulations show that there is a change in the data stored in the SRAM after a heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM is improved by increasing the supply voltage VDD.

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Section: Stability Of Graphene Nano-ribbon Fet Sram Cellmentioning

confidence: 99%

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina

2023

Micromachines

View full text Add to dashboard Cite

show abstract

Optical fiber static strain sensors: reliability issues

Cited by 1 publication

References 3 publications

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

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