All inorganic CsPbBr3-based perovskite solar
cells (PSCs)
have drawn great attention from researchers because of their high
chemical and thermal stability in an open environment. In this work,
we successfully replaced the high-temperature deposited mesoporous
caping (m-TiO2) electron transport layer (ETL) with a low-temperature
deposited aluminum-doped zinc oxide (AZO) ETL and fabricated all inorganic
CsPbBr3 PSCs using copper(I) thiocyanate (CuSCN) as a hole
transport layer (HTL). The fabricated AZO-based devices exhibited
an excellent power conversion efficiency (PCE) of 6.42%, fill factor
(FF) of 60.32%, open-circuit voltage (V
OC) of 1.01 V, and short-circuit current density (J
SC) of 10.38 mA/cm2, whereas m-TiO2-based devices exhibited PCE of 5.33%, FF of 62.88%, V
OC of 1.02 V, and J
SC of 8.39
mA/cm2 under ambient conditions. In terms of stability,
the AZO-based device retained 94% of its initial PCE, whereas the
m-TiO2-based device retained 69% of its initial PCE after
1000 h of continuous exposure in the ambient atmosphere of relative
humidity ∼81% and room temperature (RT) ∼27 °C
without any encapsulation. Therefore, this approach of replacing m-TiO2 with AZO can facilitate the fabrication of efficient and
highly stable planar all-inorganic PSCs in an ambient environment.
In addition, we represented a cheap encapsulation process for improved
stability as an additional advantage.