Optical fatigue of undoped lithium niobate crystals caused by irreversible photorefractive damage at high-intensity illumination

Кострицкий, С. М.; Bourson, P.; Mouras, Rabah; Fontana, M.D.

doi:10.1016/j.optmat.2005.11.031

Cited by 4 publications

(3 citation statements)

References 19 publications

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“…This was suggested earlier for puzzling results regarding the photovoltaic response in YBaCuO high-T C materials 28 . We also note that the photovoltaic response perpendicular to the polar threefold axis can be compensated or enhanced by a strong thermal gradient [29][30][31] . Because certain domain walls conduct electricity in BFO, this could involve local heating 21 .…”

Section: Photovoltaic Device Measurementsmentioning

confidence: 83%

Above-bandgap voltages from ferroelectric photovoltaic devices

et al. 2010

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In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The maximum voltage these devices can produce is equal to the semiconductor electronic bandgap. Here, we report the discovery of a fundamentally different mechanism for photovoltaic charge separation, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap. The separation happens at previously unobserved nanoscale steps of the electrostatic potential that naturally occur at ferroelectric domain walls in the complex oxide BiFeO(3). Electric-field control over domain structure allows the photovoltaic effect to be reversed in polarity or turned off. This new degree of control, and the high voltages produced, may find application in optoelectronic devices.

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Section: Photovoltaic Device Measurementsmentioning

confidence: 83%

Above-bandgap voltages from ferroelectric photovoltaic devices

et al. 2010

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“…These off-axis photovoltages can be mitigated via application of a thermal gradient, which causes charge diffusion to mitigate the photovoltaic effect via the Seebeck effect (Kostritskii et al, 2007(Kostritskii et al, , 2008. Hence it would be useful to more carefully examine the effects of off-axis poling and of photovoltage normal to the polar axis.…”

Section: B Photovoltaic Tensor and Off-axis Polingmentioning

confidence: 99%

Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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“…The marked changes of Raman intensity were observed only near sharp boundaries between illuminated and non-illuminated areas, where the light-induced space charges are located and induce significant distortion of crystal structure 3 . Besides, the temporal evolution of Raman spectra between successive scans of the same area allows us to determine the PRD drift because of its specific kinetics 3 .…”

Section: Optimization Of Fabrication Process With Aid Of Raman Spectrmentioning

confidence: 99%