Optical Evaluation of Silicon Wafers With Rounded Rear Pyramids

McIntosh, Keith R.; Zin, Ngwe; Nguyen, Hieu T.; Stocks, Matthew; Franklin, Evan; Fong, Kean Chern; Kho, Teng; Chong, Teck K.; Wang, Er‐Chien; Ratcliff, Thomas; Macdonald, Daniel; Blakers, Andrew

doi:10.1109/jphotov.2017.2754060

Cited by 10 publications

(3 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the uniform formation of a perovskite film on a Si surface through solution processing is challenging, an additional process is required to flatten the Si surface, etch the pyramid using chemical rounding process, or reduce the pyramid size to several micrometers. [71][72][73] Regarding diffusion, the >300 nm thick diffusion profile of previously reported Si cells is unsuitable for tunneling, and a heavily doped semiconducting thin film should therefore be applied. Considering passivation layers, the available passivation technologies can be divided into defect-reduction, Coulombic-force, and carrier-selective ones.…”

Section: New Advanced Si Cellsmentioning

confidence: 99%

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

Park

Lee

et al. 2020

Advanced Materials

View full text Add to dashboard Cite

larger acceptance owing to their decreasing cost. However, Si cells feature power conversion efficiencies (PCEs) close to the maximum practically achievable value (29.4% for crystalline Si solar cells), which makes it difficult to further reduce the levelized cost of electricity by decreasing the power output-to-cost ratio. [7,8] The most straightforward solution to this problem is to hybridize multiple semiconductor layers in a tandem architecture for absorbing the different wavelengths of the solar spectrum using different solar cell technologies. [9-12] As proven by a theoretical tandem cell efficiency of ≈46%, [13] Si solar cells with a bandgap of 1.1 eV have been regarded as potential bottom subcells of hybrid tandems, additionally offering the benefits of mass production suitability owing to well-organized production lines and global supply chains. [13,14] However, Sibased hybrid tandem solar cells configured with cost-effective solar cell technologies, including dye-sensitized solar cell (DSSC) and organic photovoltaics (OPV), have far lower efficiencies than single-junction Si solar cells, predominantly because of the insufficient compatibility of the employed materials with Si solar cells. [15-19] Metal halide perovskite-based solar cells have attracted significant attention in recent years because of their potential to be processed at low cost, high efficiencies, excellent optoelectronic properties, and tunable bandgap. They have therefore considered as prospective components of hybrid tandems. [20] Previous studies on the fundamental working principle of the hydrogenated amorphous Si (a-Si:H)/a-Si:H tandem and related validation by empirical investigations show the feasibility of combining different solar cell technologies, [6,21-23] as exemplified by the pairing of high-bandgap perovskite subcells with low-bandgap Si subcells or the assembly of dual perovskitebased tandem solar cells exploiting perovskite bandgap tunability. [14,24-26] To date, considerable effort has been directed at the development of wide-bandgap perovskite solar cells (PSCs) (1.65-1.8 eV) for hybrid tandem applications, [27,28] and remarkable progress (i.e., a high open-circuit voltage (V oc) of 1.31 V with a wide bandgap of 1.72 eV (>90% of the Shockley-Queisser limit)) has been achieved. [29] Currently, researchers aim to realize perovskite-based hybrid tandem solar cells with PCEs of 30%. Nonetheless, considerable electrical property and fabrication process adjustments are required to integrate singlejunction perovskites into the hybrid tandem architecture. The introduction of an intermediate layer to bridge different solar Hybrid tandem solar cells offer the benefits of low cost and full solar spectrum utilization. Among the hybrid tandem structures explored to date, the most popular ones have four (simple stacking design) or two (terminal/tunneling layer addition design) terminal electrodes. Although the latter design is more cost-effective than the former, its widespread application is hindered by the difficulty of preparing...

show abstract

Section: New Advanced Si Cellsmentioning

confidence: 99%

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

Park

Lee

et al. 2020

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Because of the difference of measurement principle and accuracy, each measurement method has its own advantages and disadvantages. How to choose the testing instrument to adapt to different conditions for the detection and monitoring of silicon wafer surface quality is a common concern of all relevant personnel [13].…”

Section: Introductionmentioning

confidence: 99%

The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma

Bai

Hou

2020

MSF

View full text Add to dashboard Cite

Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The interaction between plasma and the surface of silicon wafer is qualitatively discussed.

show abstract

“…To address this issue, several groups have reported increased light trapping by applying the so-called pyramids-rounding approaches at the textured rear surface. This rounding effect is commonly implemented by chemical polishing in HNO3, which is an additional step in the device fabrication sequence [7,8]. This work focuses on the evaluation of ptype silicon epitaxial layers as rear side emitters in bifacial n-type silicon PERT (BiPERT) solar cells.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical performance of rear side epitaxial emitters for bifacial silicon solar cell application

Payo

Singh

et al. 2019

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

In this work we investigated the optical and electrical performance of p-type epitaxial layers as the rear emitter of bifacial n-type PERT solar cells. In the first part of this paper, the surface morphology of epitaxial layers grown on textured surfaces is studied. Because of the epitaxial growth, a pyramids-rounding effect is observed as a result of {311} and {911} facet propagation. The growth pattern was quantified and modelled. In the second part of this paper, the optical performance of semi-device test structures is evaluated. The trend of the optical results in bifacial solar cell structures indicates that a final pyramid angle at the rear side around 20° gives the maximum light absorption in the wafer substrate. In this work we demonstrate that the epitaxial growth of the emitter on the textured rear side of these devices can already give a pyramid angle of 25° without having to introduce any additional polishing steps to modify the morphology of the textured surface. In the last part of this paper, we present the electrical results for semi-device structures created to quantify the recombination losses in the passivated and metallized regions of those p-type epitaxial emitters. These results indicate that by introducing a rear epitaxial emitter in the bifacial n-type PERT cell structure, we can increase the implied Voc up to 17mV compared to a diffused emitter with the same sheet resistance.

show abstract

Optical Evaluation of Silicon Wafers With Rounded Rear Pyramids

Cited by 10 publications

References 45 publications

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma

Optical and electrical performance of rear side epitaxial emitters for bifacial silicon solar cell application

Contact Info

Product

Resources

About