Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma

Miyauchi, Masaru; Miyoshi, Yukari; Petrović, Zoran Lj.; Makabe, Toshiaki

doi:10.1016/j.sse.2007.08.012

Cited by 20 publications

(8 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In that sense, three approaches are considered: porous materials, low-k inorganic and low-k organic compounds [63]. In this paper, we present some results connected with porous materials that are found in all classes of materials, from microporous zeolite ceramics, to mesoporous metals, to macroporous polymers, with a wide range of applications, from structural materials to energy technologies.…”

Section: Surface Roughness and Porous Materialsmentioning

confidence: 99%

Top down nano technologies in surface modification of materials

Radjenović

Radmilović-Radjenović

2011

Open Physics

View full text Add to dashboard Cite

Abstract:This article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors. PACS (2008):81.05. Rm, 85.40.Hp, 85.85.+j, 87.10.Ed

show abstract

Section: Surface Roughness and Porous Materialsmentioning

confidence: 99%

Top down nano technologies in surface modification of materials

Radjenović

Radmilović-Radjenović

2011

Open Physics

View full text Add to dashboard Cite

show abstract

“…Transition from 4 to around 2 will suffice for the technologies that are developed now, but further improvements are required in order to meet the roadmaps beyond the end of this decade. Three approaches are considered, porous materials, low-k inorganic and low-k organic compounds [64].…”

Section: Etching Of Low-k Dielectricsmentioning

confidence: 99%

Top down nano technologies in production of integrated circuits and surface modification of materials

Petrović

Radjenović

Radmilović-Radjenović

2008

2008 26th International Conference on Microelectronics

View full text Add to dashboard Cite

As microelectronic devices continue to shrink and process requirements become ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control and optimization of plasma reactors. Nowadays, plasmaetching processes are expected to produce patterns from the nanometer to the micrometer range. Charging effects in the etching of dielectrics due to ions accumulation in the shallow trenches or contact hole cause damage such as notching and earlier etching stop. In this article, a brief overview of the plasma etch process with emphasis on charging induced damage has been made. In addition, a level set method was applied to the 3D simulation of the etching profile of high aspect ratio trenches into silicon. Calculations were performed in the case of simplified model of Ar + /CF 4 non-equilibrium plasma etching of SiO 2 . The time dependence of the profile charging as well as charging on profile during SiO 2 etching in plasma are presented. We shall also illustrate the properties of etching of organic low-k dielectrics.

show abstract

“…Another motivation is to provide the transport data for the electrons in the mixtures of Ar and H 2 for modeling of such plasmas and also to point out the need to employ a more detailed kinetic modeling in sheath regions. These results can be used as the basis for modeling of anomalously broadened Doppler proles which are particularly pronounced in ArH 2 mixtures [1], fast neutral plasma etchers for organic dielectrics and the whole range of plasma ashing/ cleaning devices.…”

Section: Introductionmentioning

confidence: 98%

Transport Coefficients in Mixtures Ar/H₂

Nikitovic¹,

Stojanović²

2013

Acta Phys. Pol. A

View full text Add to dashboard Cite

In this work we present electron transport coecients for electrons in Ar/H2 mixtures for the conditions used in plasma assisted technologies for semiconductor production i.e. in moderate to very high reduced electric eld E/N (E electric eld, N gas density). We used a two term numerical solution of the Boltzmann equation at the lowest E/N and mean energies and also Monte Carlo simulation technique at moderate and high E/N . We show that a good agreement with experimental data exists for low and moderate E/N and that based on the tests for pure H2 and Ar we can model properly the high E/N development. Results were obtained for abundances of H2 from 1% to 50%. Such data are required to test the sets of cross-section data which are necessary in kinetic models for this mixture and also to produce transport coecients for uid models. Hydrogen is used for etching of organic compounds, most importantly low k dielectrics, at the same time argon as a buer gas is added to control the mean energy and distribution function. Besides, operation at high E/N allows the generation of fast neutrals for charging free etching on nanometer scales.

show abstract

Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma

Cited by 20 publications

References 33 publications

Top down nano technologies in surface modification of materials

Top down nano technologies in surface modification of materials

Top down nano technologies in production of integrated circuits and surface modification of materials

Transport Coefficients in Mixtures Ar/H₂

Contact Info

Product

Resources

About

Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma

Cited by 20 publications

References 33 publications

Top down nano technologies in surface modification of materials

Top down nano technologies in surface modification of materials

Top down nano technologies in production of integrated circuits and surface modification of materials

Transport Coefficients in Mixtures Ar/H2

Contact Info

Product

Resources

About

Transport Coefficients in Mixtures Ar/H₂