Optical, electrochemical and electrical properties of p-N,N-dimethyl-amino-benzylidene-malononitrile thin films

Abstract

A donor-acceptor small organic molecule, p-N,N-dimethyl-amino-benzylidene-malononitrile (DABMN), has been synthesized and successfully prepared in thin films using spin coating technique. The thin film of DABMN exhibited semiconductor behavior with an optical band gap of about 2.27 eV. The photoluminescence spectrum was exhibited a strong red emission. The energy levels of lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) were determined by experimental calculation from cyclic voltammetry. The electrical performance of the ITO/DABMN/Al structure device was evaluated through current-voltage characteristics and showed a typical Schottky diode behavior with good charge mobility. The charge density associated with the DABMN film was calculated from the capacitance-voltage measurements.

Synthesis, Photoluminescence and Electrical Study of Pyrazolone-Based Azomethine Ligand Zn(II) Complexes

“…To determine the dominant charge, transfer mechanism in the ITO-Zncomplex-Al “sandwich” structure, the characteristics were analyzed on a logarithmic scale ( Figure 5 b). In this case, the dependence of the current on the applied voltage is described by the power law I~Vm [ 34 ], where m is the slope value for each region of the applied voltage, characterizes the kinetics of charge carriers. The resistive mechanism, characterized by the m order of unity ( Table 2 , the value of m1), for the structures 2 and 7 operates in the interval 0 < V < 0.3 V, for 6–0 < V < 0.15 V, and for 4–0 < V < 0.5 V. The current mode by the m of the order of two and higher ( Table 2 , the value of m2) is inherent in space charge limited conduction (SCLC) [ 35 ] in the experimental structures 6 and 2, which worked at voltages less than 0.6 V, for 7–0.6 V, 4–1 V. Power-law values of m are more than 3 ( Table 2 , the value of m3), almost all experimental structures had a voltage of ~1 V, and only for 4 did these values exceed 1.5 V. Therefore, the charge transfer is regulated by the mechanism trap charge limited conduction (TCLC) [ 36 ].…”

Fabrication and Characterization of Metal/Semiconductor Junction Devices Using Four Benzaldehyde Derivatives

“…[2] Nowadays, several organic devices such as Schottky diodes, organic light-emitting diodes, organic field effect transistors, photovoltaic (PV), and solar cells are fabricated and characterized using organic semiconductors and their derivatives. [3][4][5][6][7][8] Furthermore, extensive research has been implemented for applying semiconducting organic materials to electronic devices and various condensed matter physics applications. Conventionally, the interfacial properties of metal/semiconductor (MS) contact significantly influence device performance, reliability, and stability.…”

“…As the organic materials possess easily tuneable electronic and processing properties, they are promising materials in electronic device fabrication [2] . Nowadays, several organic devices such as Schottky diodes, organic light‐emitting diodes, organic field effect transistors, photovoltaic (PV), and solar cells are fabricated and characterized using organic semiconductors and their derivatives [3–8] . Furthermore, extensive research has been implemented for applying semiconducting organic materials to electronic devices and various condensed matter physics applications.…”