Optical effects on the characteristics of a nanoscale SOI MOSFET with uniform doping profile

Gowri, K. Sri; Rajamani, V.

doi:10.1016/j.ijleo.2014.01.025

Cited by 5 publications

(5 citation statements)

References 12 publications

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“…In this work, gate oxide SiO thickness is 50 nm, which results in an oxide capacitance of 39.3 fF for a channel length of 600 nm. Next, the optical responsivity of the designed FEPTs has been calculated using [36]; l m _n o p <@ m q;,r]r6s m q;,X6YZ p <@ (4)…”

Section: Device Design and Theoretical Modelsmentioning

confidence: 99%

Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications

Kumar,

Agarwal,

Basu

2023

Proceedings of the XXXVth URSI General Assembly and Scientific Symposium – GASS 2023

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This work examines the possibility of silicon-tin (Si Sn ) alloy grown on silicon (Si) substrate via Si Sn virtual substrate (VS) for use in near-infrared (NIR) photonic devices. In this work, we use the finite element method (FEM) approach to study the proposed Si Sn -based field-effect phototransistors (FEPTs). The introduction of Sn leads to the redshift of wavelength due to the narrowing of bandgap energy. Theoretically, in order to investigate the device's electrical and optical performance, the current under dark and illumination, optical responsivity, and 3dB bandwidth are calculated. Moreover, their dependency on channel-length scaling is also investigated. In comparison to the existing Si phototransistor at λ = 850 nm, the proposed FEPT shows a comparatively high responsivity. Thus, the current work shows that the proposed Si Snbased FEPTs have the potential for use in low-cost optoelectronic receivers in NIR bands.

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Section: Device Design and Theoretical Modelsmentioning

confidence: 99%

Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications

Kumar,

Agarwal,

Basu

2023

Proceedings of the XXXVth URSI General Assembly and Scientific Symposium – GASS 2023

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“…The sub threshold swing S is the measure of gate control on the Channel in the CNTFET which is expressed as [15] 𝑆 = 𝜕 𝑉 𝑔𝑠 𝜕 log 𝐼 𝑑𝑠 (12) In DMG-CNTFET, the potential at the top of the barrier is controlled by gate, source and drain capacitance. In the proposed DMG-CNTFET device, the gate source capacitance associates with gate dielectrics Hfo2 and nanotube.…”

Section: Gatementioning

confidence: 99%

“…In Graphene NanoRibbon Field Effect Transistor (GNRFET), gate control ability on the channel, variation of the sub threshold leakage current, better drive current and maintaining sub threshold swing within the theoretical limits are obtained [11]. Modeling of Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistor (SOI-MOSFET) photo detector is studied for the effect of illumination, current-voltage characteristics [12]. The Intrinsic and extrinsic device properties of CNTFET are investigated for the 9 nm Gate Length [13].…”

Section: Introductionmentioning

confidence: 99%

Optimization of DMG-CNTFET Photo Detector for Different Illumination Conditions by Nano Scale Size and Doping Through Self-consistent Poisson- Schrodinger Equations

May

Rajamani

Kavitha

2021

Preprint

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In this paper, we propose a nano scale Dual Material Gate Carbon Nanotube field-effect transistor (DMG-CNTFET) photo detector based on self-consistent 2D Poisson and Schrodinger equation. The main advantage of the proposed device is the improved performance due to dual material gate consisting of two laterally contacting Molybdenum and Titanium metals (M1,M2) with two different work functions (𝜙𝑔𝑀1, 𝜙𝑔𝑀2). The 2D-Poisson equation is solved through finite difference method in open boundary for dark and illuminated condition. The Schrodinger equation is solved through non-equilibrium green function. The proposed DMG-CNTFET photo detector overcomes the problem of maximum thickness in gate oxide and gate size by nano-scaled sizing and highly doped source and drain. The gain and cut off frequency of the device are increased due to the reduced work function and the drain conductance. The characteristics of the proposed transistor are validated through various parameters such as drain current, transfer, sub threshold swing, trans-conductance, gain and cutoff frequency. From the simulation results, the proposed DMG-CNTFET photo detector provides better performance of trans conductance, gain and cutoff frequency. These device characteristics are the key parameters in the design and fabrication of various electronic circuitry and design and hence the relative performance improvement is achievable.

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“…6 and is not modified due to its complex nature. Following that on 2013 and 2014, two similar papers, "Optical Effects on the Characteristics of GaAs Nanoscale FinFET with Vertical Gaussian Doping Profile" [8] and "Optical Effects on the Characteristics of a Nanoscale SOI MOSFET with Uniform Doping Profile" [9], were published to display the capabilities of uniform doping and Gaussian doping when it comes to optics. These papers show that uniform doping does perform admirably, but Gaussian proves to be much more effective.…”

Section: Previous Research Work On Dopingmentioning

confidence: 99%

“…In today's VLSI industry, there are dozens of doping profiles with different application, different chemical compositions, and different physical characteristics [1,3,5,7,8,9,12,14,15]. This is mainly because of smaller transistors sizes which has the more non-ideal characteristics.…”

Section: Introductionmentioning

confidence: 99%

Parametric Variations of Transistor Doping Profiles for Ultra Low Power Applications

Domi¹,

Fouad²,

Ullah³

2018

IJVSP

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The VLSI industry is facing the significant parasitic effects that creates a serious problem for further development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles for ultra-low power applications. With a comprehensive review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform between non-ideal and ideal environments. Also, both digital and analog performance parameters are measured to ensure the uniqueness of each doping profile. After getting a list of benefits from each doping profile that is presented in this paper, it is concluded to determine which doping profile works best against a host of parasitic effects. Finally, this paper also conclude that what type of possible applications do these doping profiles.

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Optical effects on the characteristics of a nanoscale SOI MOSFET with uniform doping profile

Cited by 5 publications

References 12 publications

Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications

Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications

Optimization of DMG-CNTFET Photo Detector for Different Illumination Conditions by Nano Scale Size and Doping Through Self-consistent Poisson- Schrodinger Equations

Parametric Variations of Transistor Doping Profiles for Ultra Low Power Applications

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