Optical, dielectric and thermal properties of nanoscaled films of polyalkylsilsesquioxane composites with star-shaped poly(ε-caprolactone) and their derived nanoporous analogues

Synthesis and Characterization of Methyltriethoxysilyl-Mediated Mesoporous Silicalites

“…However, during surfactant-induced silicalite synthesis, methyl groups of MTES remaining in the silicalite frameworks prevent the formation of ordered mesoporous structures. For instance, we reported in our previous literature [27][28][29][30][31][32] that polymethylsilsesquioxane (PMSSQ) prepared from CH 3 SiX 3 precursor (X = -OCH 3 , -OC 2 H 6 , -Cl 3 , etc.) formed an amorphous thin film on a substrate.…”

“…The structures and the properties of mesoporous materials can be diversely adjusted by a sophisticated choice of organic templates, reaction parameters, and auxiliary cationic framework sources [1,6,[20][21][22][23][24][25][26]. Especially, some organic silanes, such as alkylalkoxysilane, SiR'(OR) 3 , (R' and R = methyl, ethyl, or propyl), have been used to prepare amorphous silicalites [27][28][29][30][31][32]. Therefore, the addition of organic silanes can change the pore structures of typical mesoporous silicalites.…”

Grazing-incidence small-angle X-ray scattering studies on templating nanopores in networked polymer thin films with a multi-armed porogen

“…One major approach to the development of low-k porous dielectric materials is the templated polycondensation of soluble organosilicate precursors in the presence of a thermally labile, organic polymeric porogen, with the subsequent formation of pores in the resulting dielectrics through the sacrificial thermal decomposition of the porogen (Bolze et al, 2001;Maex et al, 2003;Magbitang et al, 2005;Morgen et al, 2000;Oh et al, 2003;Nguyen et al, 1999;Ree et al, 2006). However, the tendency of porogens to aggregate in organosilicates increases the pore size and porosity of the resulting dielectrics (Bolze et al, 2001;Magbitang et al, 2005;Oh et al, 2003;Nguyen et al, 1999;Ree et al, 2006); when the size of porogen aggregates approaches the critical feature size, the resulting porous dielectrics become unsuitable for use in the production of ICs.…”

“…However, the tendency of porogens to aggregate in organosilicates increases the pore size and porosity of the resulting dielectrics (Bolze et al, 2001;Magbitang et al, 2005;Oh et al, 2003;Nguyen et al, 1999;Ree et al, 2006); when the size of porogen aggregates approaches the critical feature size, the resulting porous dielectrics become unsuitable for use in the production of ICs. A large number of arms of star-shaped porogens has been found to result in severe aggregation even with a 10 wt% porogen loading, generating large, interconnected pores in dielectric thin films (Bolze et al, 2001;Magbitang et al, 2005;Oh et al, 2003;Nguyen et al, 1999). Thus, the development of advanced ICs requires a method for generating a uniform distribution of closed pores with dimensions significantly smaller than the feature size of dielectric materials.…”

Synchrotron X-ray scattering and reflectivity studies of the structure of low dielectric constant SiOCH thin films prepared from bistrimethylsilylmethane by chemical vapor deposition

“…This signal delay and noise, as well as power consumption, depend critically on the dielectric constant (k) of the interdielectric layers. Thus, much effort has been devoted to developing new low-k dielectric materials to replace the current workhorse dielectrics, namely silicon dioxide (k = 3.9-4.3) and silicon nitride (k = 6.0-7.0) (Azooz et al, 2003;Bolze et al, 2001;Maex et al, 2003;Maier, 2001;Morgen et al, 2000;Kim et al, 2005;Oh et al, 2003;Ree et al, 2006;Yoon et al, 2006).…”