Optical Detection of Conduction Electron Spin Resonance in Semiconductors and its Application to k · p Perturbation Theory

Hermann, C.; Weisbuch, C.

doi:10.1016/b978-0-444-86741-4.50016-0

Cited by 12 publications

(8 citation statements)

References 103 publications

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“…The change is caused by two reasons. Firstly, as in the case of conventional alloys In x Ga 1−x As [16,17], the band-gap shrinkage leads to a monotonous downward shift of the effective g-factor below the value of g-factor in GaAs matrix (g = −0.44 in GaAs at helium temperature) [14]. Secondly, the coupling with isolated nitrogen levels, with the Landé factor being positive and close to the electron g-factor in vacuum g 0 = 2, tends to shift the g value upwards, as it has been first found experimentally in InGaAsN when studying the dependence of the absorption coefficient on the magnetic field [14].…”

Section: Introductionmentioning

confidence: 99%

The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect

Kalevich¹,

Ivchenko²,

Shiryaev³

et al. 2008

Semicond. Sci. Technol.

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Abstract. Positive signs of the effective g-factors for free electrons in the conduction band and electrons localized on deep paramagnetic centers have been measured in nitrogen dilute alloy GaAs 0.979 N 0.021 at room temperature. The g-factor signs have been determined from an asymmetry in the depolarization of edge photoluminescence in a transverse magnetic field (Hanle effect) at the oblique incidence of the exciting radiation and oblique-angle detection of the luminescence. The tilted spin polarization of free electrons is induced under interband absorption of circularly polarized light, and the paramagnetic centers acquire spin polarization because of spin-dependent capture of free spin-polarized electrons by these centers. The measured Hanle curve is a superposition of two lines, narrow and broad, with the widths ∼ 400 G and ∼ 50000 G, arising due to the depolarization of localized and free electrons, respectively. The difference in the linewidths by two orders of magnitude strongly indicates much longer spin lifetime for the paramagnetic centers as compared with that for the free carriers. The magnitude and direction of the asymmetry in the measured Hanle curve have been found to depend on the partial contributions to the recombination radiation from the heavy-and light-hole subbands split by a uniaxial deformation of the GaAs 1−x N x film grown on a GaAs substrate. We have extended the theory of optical orientation in order to calculate the excitation spectrum of the photoelectron tilted-spin polarization and the circularly-polarized luminescence spectrum taking into account that, in the strained samples under study, the light-hole subband lies above the heavy-hole one. The results have further been used to calculate the shape of Hanle curve as a function of the excitation and registration energies as well as the incidence and detection angles and to compare the theory with experiment.

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Section: Introductionmentioning

confidence: 99%

The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect

Kalevich¹,

Ivchenko²,

Shiryaev³

et al. 2008

Semicond. Sci. Technol.

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“…We approximate the bandstructure of InGaAsP with parabolic conduction and valence bands, characterized by the conduction and light-hole effective masses of 0.0481m 0 and 0.0537m 0 , respectively 40 , where m 0 =9.1x10 −31 1kg is the free electron mass. The magnitude of the matrix element used is given by 41,42 |M T | 2 =(24.9eV)m 0 /3, which corresponds to a dipole length of |x| ≈2.8nm at λ 0 =1500nm. Employing this gain model we obtain complex permittivity values for a 10nm InGaAsP QW at carrier densities representative of absorbing (Abs) and moderately inverted (Inv) states, N =1.0x16cm −3 and N =5.0x18cm −3 , respectively.…”

Section: Methodsmentioning

confidence: 99%

Gain-enhanced high-k transmission through metal-semiconductor hyperbolic metamaterials

Smalley¹,

Vallini²,

Shahin³

et al. 2015

Opt. Mater. Express

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We analyze the steady-state transmission of high-momentum (high-k) electromagnetic waves through metal-semiconductor multilayer systems with loss and gain in the near-infrared (NIR). Using a semi-classical optical gain model in conjunction with the scattering matrix method (SMM), we study indium gallium arsenide phosphide (InGaAsP) quantum wells as the active semiconductor, in combination with the metals, aluminum-doped zinc oxide (AZO) and silver (Ag). Under moderate external pumping levels, we find that NIR transmission through Ag/InGaAsP systems may be enhanced by several orders of magnitude relative to the unpumped case, over a large angular and frequency bandwidth. Conversely, transmission enhancement through AZO/InGaAsP systems is orders of magnitude smaller, and has a strong frequency dependence. We discuss the relative importance of Purcell enhancement on our results and validate analytical calculations based on the SMM with numerical finite-difference time domain simulations.

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“…We first examine the dependence of the electron g factors on the NWQDs diameter, D. Fig. 2 In a bulk cubic semiconductors the g factor for the conduction band, using k • p theory, is given by [78,79],…”

Section: Zinc Blende Calculationsmentioning

confidence: 99%

“…Note that in Fig. 2.8 the bulk approximation is based on the g factor for a WZ crystal, given by [79] Material parameters are obtained from [76]. The WZ parameters were estimated by increasing the gaps of InAs and InP by 10% and 6% respectively [67].…”

Section: Wurtzite Correctionsmentioning

confidence: 99%

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Spin dynamics and opto-electronic properties of some novel semiconductor systems

De¹

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A set of problems pertaining to quantum information processing in semiconductors is investigated. Two schemes for implementing electronic qubits in strong and weak three dimensional quantum confinement regimes are studied along with their related electronic properties. Recent experiments motivated us to calculate electronic properties and g factors for nanowhisker quantum dots. These calculations were done using 8 band strain dependent k.p theory on a 3D grid and are in excellent agreement with experiment. It has been observed that the growth conditions cause the nanowhiskers to crystallize in wurtzite(WZ) form instead of their stable-phase zinc-blende bulk structure. Very little is known about the WZ phase of non-nitride III-V semiconductors as they do not naturally occur. We have therefore also predicted the electronic bandstructure and optical properties of nine III-V semiconductors in the WZ phase using transferable empirical pseudopotentials. Apart from quantum dots, the spin of an electron bound to an atomic impurity is an attractive candidate for quantum information processing as they do not suffer from structural uncertainties. This makes spin of an electron bound to a hydrogenic impurity an attractive candidate for a qubit as it possess the biggest radii of any ionic bound states in the solid and is a natural two state system. We have calculated the electric and magnetic field dependent modulation of the g tensor for a single Silicon donor embedded in a GaAs substrate. The spin dynamics of the weakly bound electron exhibits an unusual nonlinear behavior, which is not seen in structures with strong quantum confinement such as quantum dots.

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Optical Detection of Conduction Electron Spin Resonance in Semiconductors and its Application to k · p Perturbation Theory

Cited by 12 publications

References 103 publications

The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect

The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect

Gain-enhanced high-k transmission through metal-semiconductor hyperbolic metamaterials

Spin dynamics and opto-electronic properties of some novel semiconductor systems

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Optical Detection of Conduction Electron Spin Resonance in Semiconductors and its Application to k · p Perturbation Theory

Cited by 12 publications

References 103 publications

The sign of electrong-factor in GaAs1−xNxmeasured by using the Hanle effect

The sign of electrong-factor in GaAs1−xNxmeasured by using the Hanle effect

Gain-enhanced high-k transmission through metal-semiconductor hyperbolic metamaterials

Spin dynamics and opto-electronic properties of some novel semiconductor systems

Contact Info

Product

Resources

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The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect

The sign of electrong-factor in GaAs_1−xN_xmeasured by using the Hanle effect