2017
DOI: 10.1038/s41467-017-01034-0
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Optical conversion of pure spin currents in hybrid molecular devices

Abstract: Carbon-based molecules offer unparalleled potential for THz and optical devices controlled by pure spin currents: a low-dissipation flow of electronic spins with no net charge displacement. However, the research so far has been focused on the electrical conversion of the spin imbalance, where molecular materials are used to mimic their crystalline counterparts. Here, we use spin currents to access the molecular dynamics and optical properties of a fullerene layer. The spin mixing conductance across Py/C60 inte… Show more

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Cited by 12 publications
(10 citation statements)
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References 54 publications
(52 reference statements)
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“…Beyond the generation of spin polarized carrier populations in semiconducting materials, recent works have also been reporting on schemes for optical detection of spin currents in hybrid devices. These so far have been based on molecular semiconductors, such as fullerenes [203].…”
Section: Spin-polarization In Semiconductors Using Plasmonsmentioning
confidence: 99%
“…Beyond the generation of spin polarized carrier populations in semiconducting materials, recent works have also been reporting on schemes for optical detection of spin currents in hybrid devices. These so far have been based on molecular semiconductors, such as fullerenes [203].…”
Section: Spin-polarization In Semiconductors Using Plasmonsmentioning
confidence: 99%
“…A consequence of the existing open shell Fe 3d orbitals in hematite is the appearance of spin ordering, which may have an impact on charge carrier dynamics as found for other systems where there is spin-orbit coupling and associated selection rules for charge transport. [43] The magnetic structure of hematite has been characterized by a number of experimental techniques. [44][45][46][47] Each Fe 3+ site has a spin of 5/2, and these spins are ordered throughout the crystal up to high temperatures (~ 950 K).…”
Section: Electronic Structurementioning
confidence: 99%
“…In practice, 𝐺 eff ↑↓ , or equivalently 𝑔 eff ↑↓ = 𝐺 eff ↑↓ ℎ/𝑒 2 , for a HM/FM system is typically determined by measuring the FM thickness (tFM) dependence of the damping (α) of in-plane magnetized bilayers based on the standard model where the tFM dependence is attributed only to the enhancement of α by spin pumping into the HM layer [7][8][9][10][11][12][24][25][26][27][28], i.e.…”
mentioning
confidence: 99%