Optical conduction in amorphous GaSe thin films

Qasrawi, A.F.; Khanfar, Hazem K.; Kmail, Renal R. N.

doi:10.1016/j.ijleo.2016.03.021

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…Likewise, the metal monochalcogenides M X (e.g. M=Ga,In; X=S,Se,Te) arouse interest for their electrical and optical properties [23][24][25][26][27][28][29][30][31][32][33][34]. In particular, gallium selenide was shown to have exceptionally large photoresponse [28], and strong second harmonic generation [35].…”

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confidence: 99%

“…A large body of research focuses on transition-metal dichalcogenides MX 2 (e.g., M = Mo,W; X = S, Se) due to their novel optical features, such as strongly bound excitons and trions, − valley-selective circular dichroism and coupling of spin and valley degrees of freedom, − and large optical absorbance by single monolayers . Likewise, the metal monochalcogenides MX (e.g., M = Ga, In; X = S, Se, Te) arouse interest for their electrical and optical properties. − In particular, gallium selenide was shown to have exceptionally large photoresponse and strong second harmonic generation . It has been successfully used in designing photodetectors and phototransistor devices by means of chemical vapor deposition or pulsed laser deposition. ,,, Gallium telluride also exhibits a large photoresponsitivity and has a smaller band gap than GaSe, making it suitable for photodetector applications …”

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confidence: 99%

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Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

2018

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We show that the absorption spectra of single-layer GaSe and GaTe in the hexagonal phase feature exciton peaks with distinct polarization selectivity. We investigate these distinct features from first-principles calculations using the GW-BSE formalism. We show that, because of the symmetry of the bands under in-plane mirror symmetry, the bound exciton states selectively couple to either in-plane or out-of-plane polarization of the light. In particular, for a p-polarized light absorption experiment, the absorption peaks of the hydrogenic s-like excitons emerge at large angle of incidence, while the overall absorbance reduces over the rest of the spectrum.

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Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

2018

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“…The impedance (Z ) values of a parallel RLC circuit connection is then determined from the relations [30], On the other hand the capacitance slowly decreases exhibiting negative values in the spectral range of 0.18-1.04 GHz. Negative capacitance effect is a novel effect useful for parasitic capacitance cancellations, signal amplification and noise reduction [31,32]. It originates from the surface charge distribution or from minoritycarrier injection caused by accumulation of minority carriers at the ITO/MgSe interface or Au/MgSe interfaces [31,32].…”

Section: Resultsmentioning

confidence: 99%

“…Negative capacitance effect is a novel effect useful for parasitic capacitance cancellations, signal amplification and noise reduction [31,32]. It originates from the surface charge distribution or from minoritycarrier injection caused by accumulation of minority carriers at the ITO/MgSe interface or Au/MgSe interfaces [31,32]. In the spectral range of 1.04-1.80 GHz, the capacitance shows positive values.…”

Section: Resultsmentioning

confidence: 99%

ITO/MgSe interfaces designed as gigahertz/terahertz filters

Almotiri

Qasrawi

2023

Phys. Scr.

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Herein a new class of MgSe gigahertz/terahertz band filters operatives in the frequency domain of 1.0 GHz-1.86 THz is fabricated and experimentally tested. MgSe band filters are coated onto glass and indium tin oxide (ITO) substrates by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. Thin films of MgSe are structurally, morphologically, compositionally, optically and electrically characterized. It is observed that ITO substrates induce the growth of monophasic of MgSe, enhances the crystallinity of the films and blueshifts the energy band gaps of MgSe. Practical applications were verified by impedance spectroscopy technique through imposing an ac signal of driving frequency in the domain of 10.0 MHz-1.8 GHz between the terminals of ITO/MgSe/Au (IMA) devices. It is observed that the IMA devices exhibit negative capacitance effect. Analysis of the cutoff frequency spectra has shown that IMA devices can reveal wide range of tunability in the gigahertz frequency domain. In addition, the cutoff frequency spectra show values reaching ~1.86 THz for signals of driving frequencies of ~1.0 GHz. Evaluation of the magnitude of the reflection coefficient spectra and return loss spectra for these devices show that the IMA devices can perform as bandstop filters with return loss values exceeding 20 dB at 1.0 GHz. The features of the ITO/MgSe/Au devices are appropriate for the 5G/6G technology needs indicating that the device can be employed in communication technology and other gigahertz/terahertz applications.

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“…Our previous studies on plasmon-electron interactions at the surface of GaSe indicated that the GaSe could exhibit an ultrafast photoconduction response. The optical conduction parameter appears to be promising for using the GaSe in the technology of midinfrared plasmonic nanoantennas [8]. Thus, here in this work, we will discuss the effect of angle of incidence of light and angle of polarization at a particular angle of incidence on the optical dielectric spectra of GaSe thin film prior to use in VLC technology.…”

Section: Introductionmentioning

confidence: 99%

Polarization Sensitive Reflection and Dielectric Spectra in GaSe Thin Films

Khanfar

Qasrawi

2016

Advances in OptoElectronics

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The light polarization effects on the optical reflective and dielectric spectra of GaSe thin films are studied in the incident light wavelength range of 200-1100 nm. In this range of measurement, the angle of incidence ( ) of light was varied between 30 ∘ and 80 ∘ . In addition, at of 30 ∘ the light polarizing angle ( ) was altered in the range of 0-90 ∘ . Regardless of the value of , for all ≻ 65 ∘ , the total reflectance sharply decreased with increasing . In addition, when is fixed at 30 ∘ and was varied, the amplitudes ratio of the polarized waves exhibits a resonance-antiresonance phenomenon at a wavelength that coincides with the film's thickness (800 nm). This behavior was assigned to the coupled interference between incident and reflected waves and to the strong absorption effects. Two main resonance peaks are observed as response to -polarized and normal incident beam: one is at ∼540 (556 nm) and the other at ∼420 THz (714 nm). The dielectric constant of the GaSe films exhibits anisotropic characteristics that nominate it for use as multipurpose optoelectronic devices.

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Optical conduction in amorphous GaSe thin films

Cited by 11 publications

References 12 publications

Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

ITO/MgSe interfaces designed as gigahertz/terahertz filters

Polarization Sensitive Reflection and Dielectric Spectra in GaSe Thin Films

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