Optical communication components

Eldada, Louay A.

doi:10.1063/1.1647701

Cited by 123 publications

(59 citation statements)

References 122 publications

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“…Current research in optical communication technologies aims to increase the operational bandwidth of emitters and detectors [1,2]. The greatest achievements have been reported in the visible and near-infrared ranges, whereas the performance in the terahertz frequency range is still considered modest.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

et al. 2011

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This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, NSi = 10 17 cmand NSi = 10 18 cm −3 , was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n + /i-GaAs homojunction are discussed.

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Section: Introductionmentioning

confidence: 99%

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

et al. 2011

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“…International activity over the past 40 years has led to various technologies being used for the fabrication of such devices: ion exchange [1], silicon-on-insulator [2] and silica-on-silicon [3]. A relatively new fabrication method that also shows good promise in this field is that of ultrafast laser directwriting.…”

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confidence: 99%

Monolithic 100 mW Yb waveguide laser fabricated using the femtosecond-laser direct-write technique

et al. 2009

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A femtosecond laser-written monolithic waveguide laser (WGL) oscillator based on a distributed feedback (DFB) architecture and fabricated in ytterbium doped phosphate glass is reported. The device lased at 1033 nm with an output power of 102 mW and a bandwidth less than 2 pm when bidirectionally pumped at 976 nm. The WGL device was stable and operated for 50 hours without degradation. This demonstration of a high performance WGL opens the possibility for creating a variety of narrow-linewidth laser designs in bulk glasses.There is an ever-growing need for integrated optical devices for use in guided wave applications such as communications and sensing. International activity over the past 40 years has led to various technologies being used for the fabrication of such devices: ion exchange [1], silicon-on-insulator [2] and silica-on-silicon [3]. A relatively new fabrication method that also shows good promise in this field is that of ultrafast laser directwriting. It was shown in 1996 that focussed femtosecond laser pulses can induce a permanent refractive index change in dielectric media [4]. The index change is initiated by the electrons in the material absorbing energy from the radiation field via various nonlinear mechanisms. Because the absorption is nonlinear, material modification remains localised at the focal point where the laser intensity is highest. Hence, by translating the material through the focus of a femtosecond laser beam, a pathway of refractive index change can be produced using this technique. In many glasses femtosecond laser irradiation results in an increase in refractive index and hence waveguiding, while in crystalline hosts such as YAG and LiNbO 3 , waveguiding can only be achieved through suppressed cladding arrangements or induced stress fields as the index change is typically negative [5]. By varying the writing geometry, the material and femtosecond laser properties, 2D and 3D optical waveguide devices with different characteristics can be fabricated in the bulk of many transparent materials [6].Ultrafast laser writing has been successfully applied to active materials resulting in the creation of waveguide amplifiers and waveguide lasers (WGLs) [5,[7][8][9][10]. For example, a femtosecond laser encoded distributed feedback (DFB) colour center laser was reported in a LiF crystal operating in a pulsed mode at 704 nm using an optical parametric oscillator (OPO) as a pump [7]. However, the grating structure of this device was incoherent, the linewidth was significantly broader than that normally expected of DFB lasers and no output powers were reported. More recently, bulk glass WGL devices have been demonstrated using external fiber Bragg gratings (FBGs) to complete a cavity around a rare-earth doped waveguide amplifier [8,9]. This configuration is a bulk glass waveguide analogue to a fiber laser and allows for efficient pumping with 1

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“…Sol-gels, for example, have been used for generating printed arrays of microlenses [17,18] . Materials such as LiNbO 3 are also attractive due to their strong non-linear and electro-optical effects [19] , and may be used in substrate or thin fi lm form.…”

Section: Technology Example 2: Microcontact Printingmentioning

confidence: 99%

Micro-optics: a micro-tutorial

Zappe

2012

Advanced Optical Technologies

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Micro-optics represents a rich discipline with many features not found in classical optics. Yet micro-optics is not merely ' small optics ' . Using the technologies of microfabrication, entirely new fabrication processes, new materials and new types of optical devices have been conceived. Here, we provide a brief introduction to the fi eld, discussing a variety of miniaturized optical components, as well as the materials from which they are made and the novel technologies used to fabricate them. Designed as a tutorial, this brief pr é cis includes adequate literature references to guide the interested reader to more in-depth treatments.

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Optical communication components

Cited by 123 publications

References 122 publications

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Monolithic 100 mW Yb waveguide laser fabricated using the femtosecond-laser direct-write technique

Micro-optics: a micro-tutorial

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Optical communication components

Cited by 123 publications

References 122 publications

Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+Layer

Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+Layer

Monolithic 100 mW Yb waveguide laser fabricated using the femtosecond-laser direct-write technique

Micro-optics: a micro-tutorial

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Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer