Optical charge state control of spin defects in 4H-SiC

Wolfowicz, Gary; Anderson, Christopher P.; Yeats, Andrew L.; Whiteley, Samuel J.; Niklas, Jens; Poluektov, Oleg G.; Heremans, F. Joseph; Awschalom, D. D.

doi:10.1038/s41467-017-01993-4

Cited by 92 publications

(182 citation statements)

References 52 publications

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“…Additionally, VV 0 ionization can be observed in our experiment under lower laser powers as a blinking behavior. Without a sufficiently strong 905 nm charge reset pulse, the VV 0 may be trapped in a non-radiative charge state for long periods of time, as has been observed in other work 41,42 . (2) (t) autocorrelation measurement of the nanobeam VV 0 , with a best fit (red) including the presence of a nonradiative state and a horizontal line (green) at g (2) = 0.5 indicating the upper threshold for a single emitter.…”

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confidence: 59%

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

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confidence: 59%

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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“…Phenomenologically, the dynamics can be understood in terms of photoswitching between two different charge states of the same defect, as is the case for color centers in diamond and SiC. [20][21][22] Furthermore, PLE spectroscopy reveals a sharp absorption resonance, at approximately 400meV higher energy than the ZPL. The ZPL and charge transition threshold energies are consistent with calculated values for the boron vacancy.…”

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confidence: 99%

Phonon sidebands of color centers in hexagonal boron nitride

2019

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We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2eV. Resonant, or quasi-resonant excitation also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Photoluminescence excitation spectroscopy reveals a defect dependent energy threshold for repumping the color center into the bright state of between 2.2 and 2.6eV. Photoionization and photocharging of the defect is the most plausible explanation for this behaviour, with the negative and neutral charge states of the boron vacancy potential candidates for the bright and dark states,

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“…Other charge states are not known and result in no PL. Optical charge state control of spin defects in 4H-SiC [154,155] can be achieved by using different optical excitation energy that can optically switch from bright to dark charge states. This has been demonstrated for both the V Si and the DV color centres in 4H.…”

Section: Electrometry and Strain Sensorsmentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Optical charge state control of spin defects in 4H-SiC

Cited by 92 publications

References 52 publications

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Phonon sidebands of color centers in hexagonal boron nitride

Silicon carbide color centers for quantum applications

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