2021
DOI: 10.1016/j.heliyon.2021.e05952
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Optical characterizations of PMMA/metal oxide nanoparticles thin films: bandgap engineering using a novel derived model

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Cited by 91 publications
(35 citation statements)
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“…Our results indicate that of undoped PMMA–PVA polymeric thin film lies in the range (1.5–1.85) as the wavelength is decreased. Introducing wt.% of 2%, 4%, 8%, and 16% of CuO NPs into PMMA–PVA polymeric thin films leads to an increase of to 1.68 at 550 nm consistent with Q. Al Bataineh study [ 18 ]. This change is independent of the concentration level of CuO NPs incorporated in (PMMA–PVA) polymeric thin films.…”
Section: Resultssupporting
confidence: 81%
See 1 more Smart Citation
“…Our results indicate that of undoped PMMA–PVA polymeric thin film lies in the range (1.5–1.85) as the wavelength is decreased. Introducing wt.% of 2%, 4%, 8%, and 16% of CuO NPs into PMMA–PVA polymeric thin films leads to an increase of to 1.68 at 550 nm consistent with Q. Al Bataineh study [ 18 ]. This change is independent of the concentration level of CuO NPs incorporated in (PMMA–PVA) polymeric thin films.…”
Section: Resultssupporting
confidence: 81%
“…Using a simple approach to introduce CuO nanoparticles into PMMA–PVA polymer-matrix composites, distinguished mechanical, thermal, physical, electrical and optical properties are obtained. Integrating this work with previously published works on PMMA–PVA doped with other types of nanoparticles [ 16 , 17 , 18 , 19 ] is expected to provide the industrial market with a wide spectrum of novel materials having a wide range of distinguished optical, mechanical, and physical properties. Numerous efforts could then be performed to expand this approach for the fabrication of highly efficient devices.…”
Section: Introductionmentioning
confidence: 85%
“…Materials with a low value of η are very suitable for SC absorber material and an antireflection layer. e refractive index of the thin films was calculated from the following equation [48],…”
Section: Optical Characteristicsmentioning
confidence: 99%
“…The H shallow donor and N shallow acceptor defects influencing the valance (VB) and conduction (CB) bands occurred due the disorders were investigated by Urbach energy ( E U ) via the equation = α 0 exp(hv∕E u ) [45]. Based on the findings in the literature, the obtained band structure was investigated using ionization and electron affinity energies [46,47]. The band structure schematic diagram illustrated in Fig.…”
Section: Resultsmentioning
confidence: 99%