Optical characterization of wedge-shaped thin films of amorphous arsenic trisulphide based only on their shrunk transmission spectra

Márquez, E.; Ramírez-Malo, J.B.; Villares, P.; Jiménez‐Garay, R.; Swanepoel, R.

doi:10.1016/0040-6090(94)06267-o

Cited by 105 publications

(45 citation statements)

References 24 publications

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“…E 0 is the single oscillator energy Table 1. The oscillator energy, E 0 is an average energy gap as pointed out in many references [29][30][31][32]. We found that E 0 value of the films is related empirically to the lowest direct band gap by E 0 ≈ 1.3 E g .…”

Section: Resultsmentioning

confidence: 90%

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

et al. 2006

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In this study, effect of indium incorporation on the optical properties is investigated for the spray pyrolyzed onto glass substrates at 275 • C substrate temperature undoped and indium doped Cd0.22Zn0.78S thin films. The average optical transmittance of all the films was over 77% in the wavelength range between 450 and 800 nm. The optical band gap energies of the thin films have been investigated by the measurement of the optical absorbance as a function of wavelength. The optical absorption studies reveal that the transitions are direct band gaps of 3.02 and 3.05 eV for undoped and doped indium Cd0.22Zn0.78S thin films, respectively. The Urbach tail parameter and optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated for these films. The dispersion parameters such as single-oscillator energy and dispersive energy were discussed in terms of the single-oscillator Wemple-DiDomenico model. PACS : 78.20.Ci

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Section: Resultsmentioning

confidence: 90%

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

et al. 2006

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“…The optical gap of thin films, from the stoichiometric compositions As 2 S 3 , has been referenced in [37,38] to be *2.4 eV; nevertheless, the authors of Refs. [21,39] have reported that the optical gap of the above-mentioned films is estimated to be *2.37 eV. Furthermore, the indirect allowed E opt g of the As 2 S 3 films has been determined in Ref.…”

Section: Temperature Dependence Of the Optical Transportsmentioning

confidence: 98%

“…In view of Ref. [21], the aforementioned method for determining a film thickness is proposed in the basis of: the coating is a thin homogeneous film with uniform thickness and is onto a transparent substrate. However, the substrate is assumed to be perfectly smooth and thick enough, making the planes are not perfectly parallel, leading to that all interference effects via the substrate are vanished.…”

Section: Determination Of the Film Thicknessmentioning

confidence: 99%

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

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Chalcogenide amorphous thin films of the modification (As 2 S 3 ) 0.95 Cu 0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.

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“…The normal-incidence transmittances λ of a typical 1.1-mm thick air-supported glass-slide and of air-supported selenium four-layered structures were measured at room temperature as a function of spectral wavelength λ in the range 300-1100 nm. Transmittance measurements were made using a double-beam SPECORD ® UV-Vis-NIR spectrophotometer (Analytik Jena AG Model 210) at a scan rate of 120 nm/min with a narrow spectral bandwidth (SBW) ( 4 nm) to avoid shrinking of interference-fringe pattern of as-measured λ λ spectra ( Tan, 2006;Tan et al, 2007;Tan et al, 2006;Swanepoel, 1984;Bennouna et al, 1992;Márquez et al, 1995;Ruíz-Pérez et al, 2001;Márquez et al, 1999;Pradeep & Agarwal, 2010;Richards, 1998;Richards et al, 2004) and to have good signal-to-noise ratio. Both of the λ λ spectra of the studied {air/thin a-Se-film/thick glass-slide/air}-and {air/thick glass-slide/air}-samples were recorded relative to a corrected air-baseline, where the transmittance of air was recorded with both light-beam paths were free from any sample and then normalized to 100%.…”

Section: Methodsmentioning

confidence: 99%

Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra

Saleh¹,

Jafar²,

Bulos³

et al. 2014

APR

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Normal-incidence specular transmittance of undoped amorphous selenium (a-Se) films of several thicknesses ( 0.25 1 μm ) thermally evaporated on thick microscopic glass-slide substrates upheld at temperatures near 30 (below glass transition temperature of undoped Se) has been measured at room temperature in the spectral wavelength range 300 1100 nm. Above a threshold wavelength (~ 600 nm), their as-measured curves display transmittance values near that of glass substrates and exhibit well-resolved interference-fringe maxima and minima, signifying good uniformity of fabricated a-Se films. Below , the curves decline progressively to zero transmittance, preceded by a tailing-like trend of possible structural disorder origin. The spectral dependencies of optical constants and of the studied a-Se films on were retrieved from iterative curve-fitting of their -data to theoretical -formulations of an air-supported {thin film/thick substrate}-stack using the O'Leary-Johnson-Lim (OJL) interband-transition dielectric model, combined with a dielectric constant , representing the dielectric background at very high photon energies (at spectral wavelengths much smaller than measured). Regardless of the number of observed interference fringes, reliable simulation to the as-measured normal-incidence -spectra has been achieved, but were remarkably curve-fitted if we presume that a thin roughness layer ( 5 nm) of selenium was formed on top of the fabricated undoped a-Se films. The retrieved spectra display a broad peak around ≅ 0.52 μm, below which was found to vary with wavelength in accordance with a Sellmeier-like (Wemple-DiDominco) single-oscillator (normal) dispersion formula, with a static index of refraction 0 ≅ 2.42, where is the static dielectric constant of the material at zero photon energy , and an oscillator "average" bandgap energy of ≅ 3.93 eV ≅ 2 , the optical (Tauc) bandgap energy. The values of of studied undoped a-Se films deduced from Tauc-like plots were around 1.92 eV ( 0.02 eV) and the retrieved values of OJL band-tailing energy parameter (Urbach-tail parameter Γ ) was found to be in the range 40 50 meV, slightly dependent on film thickness.

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Optical characterization of wedge-shaped thin films of amorphous arsenic trisulphide based only on their shrunk transmission spectra

Cited by 105 publications

References 24 publications

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra

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