Optical characterization of thin thermal oxide films on copper by ellipsometry

Atomistic details of oxide surfaces and surface oxidation: the example of copper and its oxides

“…growth of thickness of the oxide as a function of time, and they are summarised in Fig 11. A number of theories have been proposed [277][278][279][280] , mostly based on the Cabrera and Mott 281 theory and they postulate that, under the assumption of uniform epitaxial growth, the thickness of a metal oxide increases following an inverse logarithmic rate law for very thin films (up to 7.3 nm for Cu) and a cubic law for thicker films (up to 1.5 µm). A number of works 228,274,282,283 find qualitative agreement with the Cabrera-Mott theory, however linear oxide growth has been observed in other studies 263,284,285 , as well as power (n < 1) 286 or parabolic law 287 .…”

Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase

“…However, vacuum assisted growth of oxide material under cleaner ambient through physical route would be an alternative approach. [39][40][41][42][43][44] Valladares et. al reported the oxidation of thin Cu films under air annealing where an increase in electrical resistivity of the films due to oxidation has been observed.…”

“…39 Derin et al reported the optical properties of the Cu oxide film grown by thermal annealing of Cu films. 40 Ellipsometry was used in the visible region to determine the Cu 2 O film thickness by measuring the optical constants n (refractive index) and k (extinction coefficient). In addition, band gap of the oxide films was also measured from the absorption spectra.…”

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol–gel method

“…Transparent conducting oxides (TCO) are of great importance for their applications in optics, electronics and energy harvesting devices [1,2]. Zinc oxide (ZnO), a member of TCO, is a wide band gap (E g = 3.37 eV) semiconductor with large free excitation binding energy (60 meV) [3].…”