Optical characterization of the deep Cr level in GaAs

Leyral, P.; Litty, F.; Loualiche, Slimane; Nouailhat, A.; Guillot, G.

doi:10.1016/0038-1098(81)90474-9

Cited by 14 publications

(7 citation statements)

References 5 publications

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“…Thus the present lower bound estimation of A ~ 150 meV (Fig. 3) is consistent (relatively closely approaching) with this typical magnitude of F-C shift values for nearly midgap GaAs: Cr levels [20,21].…”

Section: To 18)) a Convenient Way For Determining This Basic Trap Pasupporting

confidence: 87%

“…(Note that this earlier underestimation was obviously due to the relative roughness of the corresponding approach in [5,26].) In this connection it may be ofinterest to refer still to detailed numerical analyses [20,21] of luminescence bands associated with deep GaAs: Cr levels which have given throughout F-C shift values of the order of A = 170 to 200 meV. Thus the present lower bound estimation of A ~ 150 meV (Fig.…”

Section: To 18)) a Convenient Way For Determining This Basic Trap Pamentioning

confidence: 63%

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Alternative Way for Detecting Franck‐Condon Shifts from Thermally Broadened Photoneutralization Cross‐Section Bands of Deep Traps in Semiconductors

Pässler

1994

Physica Status Solidi (b)

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Section: To 18)) a Convenient Way For Determining This Basic Trap Pasupporting

confidence: 87%

Section: To 18)) a Convenient Way For Determining This Basic Trap Pamentioning

confidence: 63%

Alternative Way for Detecting Franck‐Condon Shifts from Thermally Broadened Photoneutralization Cross‐Section Bands of Deep Traps in Semiconductors

Pässler

1994

Physica Status Solidi (b)

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“…The experimental set-up for the photoluminescence (PL) measurements has already been described [40]. The detection is made with a Bausch and Lomb high intensity monochromator (grating 337.5 lines/mm blazed at 2 pm) followed by a PbS cell at 77 K, the excitation with a YAG laser (1 W at 1.06 pm) and the sample temperature can be fixed between 4 K and 300 K.…”

Section: Photoluminescence Experiments -mentioning

confidence: 99%

“…6 and 8) typical of the intracentre Fe2+ radiative transition (5 T2 __+ 5E). Its excitation mechanism under YAG excitation will be presented elsewhere [49].…”

Section: Fig 5 -Photoionization Cross Sectionmentioning

confidence: 99%

“…One of our aims was also to measure the excitation spectra of two luminescence bands peaking at 0.57 eV and 0.62 eV found in GaAs : Cr by YAG laser excitation and which have tentatively attributed to the transition between the (Cr3 + -Cr2 + ) level and the valence band and conduction band respectively [38] and to correlate them with the shape of Jg and ep of the same centre. Some preliminary results have already been reported [40].…”

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confidence: 95%

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Detailed optical characterization of the deep cr level in gaas

et al. 1982

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The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both σon(hv) and σ op(hv), the optical cross sections for the transitions between a deep level and the conduction and valence bands, in a very sensitive and selective way. We have applied this technique to the optical study of the HL1 trap related to chromium in GaAs, in very pure LPE layers of n and p type doped with chromium. We can therefore determine what kind of charge states of chromium we are dealing with by çomparing σo n and σop with the optical absorption spectra in bulk materials. Moreover, comparisons between the excitation spectra of luminescence and the photoionization cross section σo n and σop have given unambiguous interpretation of the origin of the two luminescence bands at 0.57 and 0.62 eV found by YAG laser excitation in bulk Cr doped GaAs depending on the Fermi level position. They are interpreted as the radiative transitions between the (Cr3+-Cr2+ ) centre and the bands. In this way, we give a coherent description of the thermal and optical properties of the single deep acceptor level corresponding to the Cr 3+ or Cr2+ states according to its electronic filling

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The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

Pastrňák

Karel

Oswald

et al. 1987

Phys. Stat. Sol. (a)

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Spectral photoconductivity curves of SI GaAs:Cr crystals are measured in the extrinsic region using the two light sources method; high intensity monochromatic illumination ensures steady‐state population of levels; and probe light of low intensity serves to measure corresponding photoconductivity curves. The set of obtained curves is decomposed into elementary contributions using the minimization program MINUIT. The obtained photoionization cross‐sections are compared with those from absorption measurements and interpreted as transitions involving Cr2+, Cr3+, and Cr4+ ions. The influence of interaction among impurities and of internal electric field on the photoionization cross‐section is discussed.

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Optical characterization of the deep Cr level in GaAs

Cited by 14 publications

References 5 publications

Alternative Way for Detecting Franck‐Condon Shifts from Thermally Broadened Photoneutralization Cross‐Section Bands of Deep Traps in Semiconductors

Alternative Way for Detecting Franck‐Condon Shifts from Thermally Broadened Photoneutralization Cross‐Section Bands of Deep Traps in Semiconductors

Detailed optical characterization of the deep cr level in gaas

The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

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