Optical characterization of SnO2:F films by spectroscopic ellipsometry

SnO2 dendrites–nanowires for optoelectronic and gas sensing applications

“…7a) and is found to be 3.20 ± 0.02 eV. This value is very close to the value 3.22 eV obtained for SnO 2 grown by spray deposition [25]; however, it is lower than the recently reported values 3.95 eV [26] and 4.15-4.30 eV [27] for SnO 2 grown by ultrasonic spray pyrolysis and RF-magnetron sputtering techniques, respectively. The low value may be ascribed to the slight deviation from stoichiometric SnO 2 as revealed by TGA analysis.…”

“…The obtained E u value is 474 meV. The obtained E u value for the SnO 2 DNWs is higher than the reported value, 270 meV, for the ultrasonic spray pyrolysis deposited SnO 2 [26], however, it lies among the values 386-789 meV reported for RF-magnetron sputtering [27]. It suggests that the defects in the SnO 2 depend mainly on the preparation conditions used in the CVD or the PVD method and not on the method itself.…”

Structural, Morphological and Optical Characterization of SnO₂:F Thin Films Prepared by Chemical Spray Pyrolysis

“…It is also found that the lattice constant (a) increase slightly with increasing fluorine doping in the films, while there are an arbitrary changed in the lattice constant (c) with increasing fluorine doping. Figures [2,3] show the lattice constant (a) and (c) as a function of fluorine content in the films. …”

“…Due to their optical and electrical properties, TCOs are used for photovoltaic solar cells, phototransistors, liquid crystal displays, optical heaters, gas sensors, transparent electrodes and other optoelectronic devices [2][3][4][5][6][7][8][9]. Among these TCOs SnO 2 films are inexpensive, chemically stable in acidic and basic solutions, thermally stable in oxidizing environments at high temperatures and also mechanically strong, which are important attributes for the fabrication and operation of solar cells [10][11][12].…”

Detailed investigation of submicrometer-sized grains of chemically sprayed (Sn1−xAlx, O2) (0≤x≤0.085) thin films

“…In addition, ions of Pt and Pd reduced the optical band gap from 4 eV to 2.8 eV [34]. Fluorine ions changed very slightly the optical band gap of SnO 2 [35]. SnO 2 , prepared by sol gel route, exhibited an optical band gap of 3.48-3.72 eV [36] and iron ions reduced the value of E g from 3.87 to 3.38 eV [37].…”