Optical characterization of polysilicon thin films for solar applications

Müllerová, Jarmila; Jurečka, Stanislav; Šutta, P.

doi:10.1016/j.solener.2005.10.009

Cited by 30 publications

(24 citation statements)

References 13 publications

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“…This peak can be attributed to the asymmetric stretching mode of Si-O-Si. 11 In addition, a broad peak is observed at about 3000 cm À1 to 4000 cm À1 for samples prepared with H dilutions up to 80%, which can be attributed to the Si-OH stretching mode. 11 Conversely, no apparent peak is observed at about 3000 cm À1 to 4000 cm À1 for the samples prepared at a high H dilution of 98% and 99%; rather a broad peak in the range of 1500 cm À1 to 3000 cm À1 is observed, which can be attributed to SiH or SiH 2 stretching mode.…”

Section: Resultsmentioning

confidence: 96%

Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature

Letha

Chan

Hwang

2009

Journal of Elec Materi

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The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H 2 to SiH 4 + H 2 were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (a-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasmaenhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.

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Section: Resultsmentioning

confidence: 96%

Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature

Letha

Chan

Hwang

2009

Journal of Elec Materi

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“…However, there exist ambiguities about the band gap of nanocrystalline silicon film. The band gap of hydrogenated amorphous silicon is in the range 1.65-1.78 eV [29,30] whereas band gap of polycrystalline silicon has been found near to the band gap of crystalline silicon (≈ 1.12 eV, bulk value [31]). However, in case of mixed phase of crystalline and amorphous, i.e.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…However, in case of mixed phase of crystalline and amorphous, i.e. nanocrystalline phase, band gap should lie between amorphous and crystalline depending upon the phase fractions [31][32][33]. In nano/microcrystalline silicon, optical properties are greatly influenced by ratio of volume fraction of crystalline and amorphous phase and also by the hydrogen content in the film.…”

Section: Optical Propertiesmentioning

confidence: 99%

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

et al. 2011

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Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.

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“…That's why it is important to know the thickness, optical constants, optical and absorption properties as a function of wavelength to predict the photoelectric behavior of modern optoelectronic and optical devices [4]. The structure of a thin film is manifested in the optical properties [5]. Optical property measurements and analysis tool determines spectral reflectance-transmittance characteristics of optical thin-film over wavelength range of ultraviolet (UV) to infrared (IR) regions [6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Reflectance and Transmittance Characteristics of Optical Thin Film for Various Film Materials, Thicknesses and Substrates

Z¹,

Sultana²

2015

J Elec Electron Syst

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Optical characterization of polysilicon thin films for solar applications

Cited by 30 publications

References 13 publications

Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature

Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

Analysis of Reflectance and Transmittance Characteristics of Optical Thin Film for Various Film Materials, Thicknesses and Substrates

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