Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE

Benyattou, T.; García, María de las Nieves González; Moneger, S.; Tabata, A.; Sacilotti, M.; Ábrahám, Pierre; Monteil, Y.; Landers, Richard

doi:10.1016/0169-4332(93)90089-t

Cited by 13 publications

(9 citation statements)

References 11 publications

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“…A similar excitation power dependent blue-shift of PL was previously reported in quantum wells with staggered band alignment and was observed by many authors. – We believe that the spectral blue-shift observed in our RT nanowires is a manifestation of the latter type of band alignment of the heterostructures formed by the alternating WZ and ZB sections. The quantum confinement effect can be neglected due to the large nanowire diameter (∼80 nm).…”

Section: Interpretation and Discussionsupporting

confidence: 90%

“…However, due to the variation of twinning spacing, we have a distribution of ZB-rich and WZrich regions with various thicknesses, which may contribute to a broader PL line width and a lack of a clear kink in Figure 4a. [24][25][26][27] The observation that the peak energy of the PL spectrum at low excitation power is close to the bandgap of ZB InP (Figure 2b) also agrees with the calculations shown in Figure 5c.…”

supporting

confidence: 87%

“…The existence of two different effects results in a kink in the curve of peak energy shift versus excitation power. [24][25][26][27] In our twinned InP nanowires, as indicated by TEM in Figure 1b, twinning occurs nonperiodically along the nanowire. In some regions, there is a long segment of ZB-InP-rich structure, due to the large spacing between twin planes (see Figure 1c), while in other regions, there is a WZ-InP-rich segment because of closely spaced twin planes (Figure 1d).…”

mentioning

confidence: 68%

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Optical Properties of Rotationally Twinned InP Nanowire Heterostructures

et al. 2008

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We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc blende InP nanowires. We have constructed the energy band diagram of the resulting multiquantum well heterostructure and have performed detailed quantum mechanical calculations of the electron and hole wave functions. The excitation power dependent blue-shift of the photoluminescence can be explained in terms of the predicted staggered band alignment of the rotationally twinned zinc blende/wurzite InP heterostructure and of the concomitant diagonal transitions between localized electron and hole states responsible for radiative recombination. The ability of rotational twinning to introduce a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering.

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Section: Interpretation and Discussionsupporting

confidence: 90%

supporting

confidence: 87%

mentioning

confidence: 68%

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Optical Properties of Rotationally Twinned InP Nanowire Heterostructures

et al. 2008

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“…As the excitation power increases, band-filling effects occur in our samples and shift the observed optical transition. Similar behaviour has also been observed in the InAlAs/InP type-II heterostructures [17]. Previous works on InGaAs/InGaAs QWs [12] and superlattices [10,11,18] have lead to a great variety of band-offset values for this material system.…”

Section: Pl Results and Band Offset Determinationsupporting

confidence: 54%

Electro-absorption modulator using a type-II quantum well in the InxGa1−xAs/InAlAs/InP system

Lugand

Benyattou

Guillot

et al. 1998

Superlattices and Microstructures

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“…Similar behavior has also been observed in the AlInAs/InP type II heterostructure. 21 To go deeper in the investigation of this type II band lineup we try to determine the valence band offset value using the PL results. The general expression for the ELH 1 transition is…”

Section: ͓S0003-6951͑97͒02124-4͔mentioning

confidence: 99%

Type II recombination and band offset determination in a tensile strained InGaAs quantum well

Lugand

Benyattou

Guillot

et al. 1997

Applied Physics Letters

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Photoluminescence measurements under different excitation powers and time-resolved photoluminescence experiments were carried out at low temperature on tensile strained In0.3Ga0.7As quantum wells with InGaAs barriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in the lattice matched one. This study allows us to propose a precise determination of the light holes band offset in the In0.3Ga0.7As/In0.53Ga0.47As system.

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Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE

Cited by 13 publications

References 11 publications

Optical Properties of Rotationally Twinned InP Nanowire Heterostructures

Optical Properties of Rotationally Twinned InP Nanowire Heterostructures

Electro-absorption modulator using a type-II quantum well in the InxGa1−xAs/InAlAs/InP system

Type II recombination and band offset determination in a tensile strained InGaAs quantum well

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