Optical Characterization of GalnP Layers

Moser, M.; Geng, C.; Lath, E.; Scholz, F.

doi:10.1109/movpe.1992.665021

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“…16,30,31 Semiconductor parameters used in the model were taken from previous studies. [32][33][34][35][36][37][38][39][40][41] For the analysis of the electronic characteristics of the solar cells, J-V dark and 1 sun J(V)-Jsc were fitted using a two-diode model, with fixed diode idealities of 1 and 2. 28,42 3 | RESULTS AND DISCUSSION…”

Section: Methodsmentioning

confidence: 99%

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1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency

Slimane

Michaud

Mauguin

et al. 2020

Progress in Photovoltaics

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We report on AlGaAs‐based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p‐AlGaAs base with tunable bandgap, and a thin 50 nm n‐InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2‐μm‐thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si‐based tandem devices.

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Section: Methodsmentioning

confidence: 99%

“…They are directly related to the drift‐diffusion model in the emitter, the base, and the depletion region . Semiconductor parameters used in the model were taken from previous studies …”

Section: Methodsmentioning

confidence: 99%