Optical characterization of epitaxial Ga/sub x/In/sub 1-x/As suitable for thermophotovoltaic (TPV) converters

Wangensteen, T.; Wanlass, M. W.; Carapella, J. J.; Moutinho, H. R.; Mason, Alex; Webb, Jennifer M.; Abulfotuh, F.

doi:10.1109/pvsc.1997.654249

Cited by 2 publications

(6 citation statements)

References 3 publications

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“…TPV device structures and undoped device analog structures [15] incorporating Ga x In 1-x As layers were grown using metal-organic vapor-phase epitaxy (MOVPE) [18] on InP substrates. The detailed structure of the multilayer Ga x In 1-x As samples is shown in the figures accompanying the results and discussion.…”

Section: Samplesmentioning

confidence: 99%

“…The detailed structure of the multilayer Ga x In 1-x As samples is shown in the figures accompanying the results and discussion. Continuously graded layers (CGL) and step-graded layers (GL) are grown between the absorber and the substrate in lattice-mismatched (LMM) TPV devices to enable epitaxial growth while controlling absorber bandgap by varying x in the Ga x In 1-x As films [15,18].…”

Section: Samplesmentioning

confidence: 99%

“…Problems that were addressed using FT-PL spectroscopy, alone or in combination with other analytical techniques, have included junction formation and surface passivation in CIGS PV devices [13] and determination of the bandgap and the strain-induced effects on material quality in GaInAs TPV epitaxial films [15]. In CIGS devices using CdS or ZnO buffer layers, the p/n active junction resides at or near the buffer/CIGS interface [16].…”

Section: Introductionmentioning

confidence: 99%

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Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Webb

Keyes

Ahrenkiel

et al. 1999

Vibrational Spectroscopy

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We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. We present here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm -1 , enabling FTluminescence measurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

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Section: Samplesmentioning

confidence: 99%

Section: Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Webb

Keyes

Ahrenkiel

et al. 1999

Vibrational Spectroscopy

View full text Add to dashboard Cite

show abstract

“…TPV device structures and undoped device analog structures (12) incorporating Ga x In 1-x As or InAs y P 1-y absorber and graded composition (graded x) layers were grown using metalorganic vapor-phase epitaxy (MOVPE) on InP substrates (1). The detailed structure of the multilayer Ga x In 1-x As samples is shown in the figures accompanying the results and discussion.…”

Section: Experimental Approachmentioning

confidence: 99%

“…We have used FT-PL spectroscopy with other analytical techniques to solve problems such as junction formation and surface passivation in CIS PV devices (10), determination of optical gap and strain-induced effects on recombination rates in III-V TPV materials and devices (12), and band-gap analysis of graded-composition TPV devices (13). In the present work, we will focus on the results of FTIR reflectance and FT-PL analyses of TPV materials and devices.…”

Section: Introductionmentioning

confidence: 99%

FTIR and FT-PL spectroscopic analysis of TPV materials and devices

Webb¹,

Gedvilas²,

Olson³

et al. 1999

AIP Conference Proceedings

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Abstract. Fourier transform (FT) spectroscopic techniques are useful in determining properties of thermophotovoltaic (TPV) materials and devices. The III-V TPV absorber materials have energy bandgaps that can be optimized for conversion of the near-infrared radiation emitted by thermal sources in the 1000 O -1200 O C temperature range. The bandgaps of these materials can be measured at room temperature using FT-photoluminescence spectroscopy, which can be done with a modified FT-Raman spectrophotometer operating in the near-infrared spectral region. The intensities and bandwidths of the FT-PL spectra also provide information on the extent of non-radiative recombination and the compositional uniformity of the materials. To achieve adequate operating efficiencies, TPV converters must return sub-bandgap radiation to the thermal source. The percent reflectance of the device in the mid-infrared spectral region is therefore an important operating parameter that can be accurately measured using FT-infrared (FTIR) spectroscopy with total reflectance optical accessories. In this paper, we discuss applications of these techniques to TPV materials and devices, and variations on these approaches, such as scanning micro-FT-PL spectroscopy, that enable microanalysis of TPV device structures at the 1-100-µm scale.

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Optical characterization of epitaxial Ga/sub x/In/sub 1-x/As suitable for thermophotovoltaic (TPV) converters

Cited by 2 publications

References 3 publications

Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

FTIR and FT-PL spectroscopic analysis of TPV materials and devices

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