Optical characteristics of type-II ZnTe/ZnSe quantum dots for visible wavelength device applications

Hong, Woo-Pyo; Park, Seoung–Hwan

doi:10.1007/s40042-021-00379-6

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…They found that QDs with smaller wetting layer thicknesses display greater exciton binding energies, which lead to an increased carrier confinement effect. In addition, Hong et al investigated the optical characteristics of type II pyramidal ZnTe/ZnSe QDs and reached a number of conclusions [238]. More specifically, they described that the band bending effect in the conduction-and valenceband potential distribution principally occurs in the QDs and in the capping layer region.…”

Section: Fundamental Optical Processes Based On Pyramidal Low-dimensi...mentioning

confidence: 99%

Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics

Jiang,

Xing,

Lin

et al. 2024

Photonics

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Numerous optoelectronic devices based on low-dimensional nanostructures have been developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero- and one-dimensional nanomaterials) have been favored in the field of optoelectronics. In this review, we discuss in detail the structures, preparation methods, band structures, electronic properties, and optoelectronic applications (photocatalysis, photoelectric detection, solar cells, light-emitting diodes, lasers, and optical quantum information processing) of pyramidal low-dimensional semiconductors and demonstrate their excellent photoelectric performances. More specifically, pyramidal semiconductor quantum dots (PSQDs) possess higher mobilities and longer lifetimes, which would be more suitable for photovoltaic devices requiring fast carrier transport. In addition, the linear polarization direction of exciton emission is easily controlled via the direction of magnetic field in PSQDs with C3v symmetry, so that all-optical multi-qubit gates based on electron spin as a quantum bit could be realized. Therefore, the use of PSQDs (e.g., InAs, GaN, InGaAs, and InGaN) as effective candidates for constructing optical quantum devices is examined due to the growing interest in optical quantum information processing. Pyramidal semiconductor nanorods (PSNRs) and pyramidal semiconductor nanowires (PSNWRs) also exhibit the more efficient separation of electron-hole pairs and strong light absorption effects, which are expected to be widely utilized in light-receiving devices. Finally, this review concludes with a summary of the current problems and suggestions for potential future research directions in the context of pyramidal low-dimensional semiconductors.

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Section: Fundamental Optical Processes Based On Pyramidal Low-dimensi...mentioning

confidence: 99%

Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics

Jiang,

Xing,

Lin

et al. 2024

Photonics

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Tuning the electronic structure and absorption spectrum of ZnTe/ZnS heterojunctions by selective doping with yttrium: A first-principle study

Li,

Huang

et al. 2023

Int. J. Mod. Phys. B

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This paper systematically investigates the electronic structure and optical properties of zinc-blende ZnTe, ZnS systems, ZnTe/ZnS heterojunctions, and Y-doped ZnTe/ZnS heterostructions using the generalized gradient approximation (GGA) method under the density functional theory (DFT) framework. The results show that compared to the single-component ZnTe or ZnS systems, the ZnTe/ZnS heterojunction has a smaller bandgap width and undergoes a redshift in the absorption spectrum, which is favorable for more valence band electrons to be excited by light and transition to the conduction band, thereby enhancing the optoelectronic properties of the material. After Y-doping in the ZnTe/ZnS heterojunction system, when the doping concentration is between 1.56[Formula: see text]at% and 4.69[Formula: see text]at%, doping Y in the ZnS layer would result in the lowest energy formation of the system. Therefore, it can be inferred that in experiments, if the doping concentration is increased beyond this range, Y atoms are more likely to be arranged in the ZnS layer. Compared with the pure ZnTe/ZnS heterojunction system, increasing the Y doping concentration results in a wider bandgap and a more prominent blue shift in the absorption spectrum. Therefore, it is possible to adjust the bandgap of the heterojunction by changing the doping concentration to fabricate heterojunction device with different photoelectric effects and luminescence properties.

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Optical characteristics of type-II ZnTe/ZnSe quantum dots for visible wavelength device applications

Cited by 2 publications

References 25 publications

Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics

Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics

Tuning the electronic structure and absorption spectrum of ZnTe/ZnS heterojunctions by selective doping with yttrium: A first-principle study

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