2004
DOI: 10.1016/s0955-2219(03)00596-x
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Optical characteristics of Ge doped ZnO compound

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Cited by 73 publications
(34 citation statements)
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“…In other studies of Ge in ZnO, PL lines are also attributed to color centers in GeO rather than to isolated Ge impurities in ZnO. [28][29][30] We are satisfied that none of these earlier works included luminescence attributable to isolated Ge impurities.…”
Section: Nature Of the Ge-related Luminescence In Znomentioning
confidence: 64%
“…In other studies of Ge in ZnO, PL lines are also attributed to color centers in GeO rather than to isolated Ge impurities in ZnO. [28][29][30] We are satisfied that none of these earlier works included luminescence attributable to isolated Ge impurities.…”
Section: Nature Of the Ge-related Luminescence In Znomentioning
confidence: 64%
“…The band gap energy of 2.81 eV has been found for as-prepared CuO nanostructures, which is much higher as compared to the band gap energy of bulk CuO (1.2 eV) [27]. The incorporation of Sn ions in CuO matrix lead to the reduction of optical band gap energy of CuO nanostructures down to 2.09eV as shown in figure 6 which may be attributed to band tail creation under the conduction band [27]. Since Sn act as donor in CuO, the carrier concentration will increase upon Sn doping which leads to band tail creation due to excessive donors.…”
Section: Hν N B Hν Egmentioning
confidence: 80%
“…The band gap energies have been obtained from (αhν) 2 versus hv plots by extending linear portion of the curves to the energy axis and shown in the inset of figure 5. The band gap energy of 2.81 eV has been found for as-prepared CuO nanostructures, which is much higher as compared to the band gap energy of bulk CuO (1.2 eV) [27]. The incorporation of Sn ions in CuO matrix lead to the reduction of optical band gap energy of CuO nanostructures down to 2.09eV as shown in figure 6 which may be attributed to band tail creation under the conduction band [27].…”
Section: Hν N B Hν Egmentioning
confidence: 91%
“…The increase in band gap energies beyond certain limit of Fe doping may be understood on the basis that at higher concentration of Fe 2+ ions, more oxygen vacancies are introduced in structure of CeO 2 nanoparticles due to their charge difference with Ce 3+ ions. These oxygen vacancies may lead to band filling effect which causes the enlargement of the band gap [21]. value of pristine CeO 2 nanoparticles is found to be 0.00083emu/g which increases up to 0.0126emu/g for 7% Fe doped nanoparticles.…”
Section: Optical Studymentioning
confidence: 94%