Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Lester, L. F.; Stintz, A.; Li, H.; Newell, T.C.; Pease, E.A.; Fuchs, B.; Malloy, K.J.

doi:10.1109/68.775303

Cited by 230 publications

(90 citation statements)

References 11 publications

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“…A 942 nm SK-QD laser using MBE growth was first developed by Kirstaedter et al, and demonstrated a significantly reduced j th of 120 A/cm 2 at 77 K and 950 A/cm 2 at RT [Led94,Kir94]. This breakthrough started a series of reports on improved MBE-grown SK-QD lasers with j th down to 19 A/cm 2 , realized with aluminum-oxide confinement layers and emission wavelength up to 1.3 µm [Les99,Par00]. While the extremely low threshold characteristics and long wavelength emission around 1.3 µm of these QD lasers were predominantly achieved by MBE-grown devices (an overview can be found in [Kai06]), the first successful MOVPE-based fabrication of SK-QD lasers emerged in 1997 [Hei97b].…”

Section: Evolution Of Semiconductor Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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Section: Evolution Of Semiconductor Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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“…InAs КТ в матрице GaAs позволят получать светоизлучающие приборы на длинах волн порядка 1.3−1.35 мкм, что соответствует второму окну прозрачности кварцевого оптоволокна [3][4][5]. Осаждение InAs КТ на метаморфный буфер (МБ) InGaAs (мета-морфные КТ) позволяет обеспечить дальнейшее увели-чение длины волны излучения.…”

Section: Introductionunclassified

Квантовые точки InAs, выращенные в метаморфной матрице In-=SUB=-0.25-=/SUB=-Ga-=SUB=-0.75-=/SUB=-As методом МОС-гидридной эпитаксии

Mintairov¹,

Калюжный²,

Maksimov³

et al. 2017

Физика И Техника Полупроводников

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Методом МОС-гидридной эпитаксии на подложках GaAs выращены квантовые точки InAs в метаморфной матрице InGaAs, излучающие в диапазоне длин волн 1380-1400 нм при комнатной температуре. Структуры выращивались на многослойном метаморфном буфере, состоящем из девяти подслоев InxGa1-xAs, каждый из которых имел толщину 200 нм. В первых семи слоях концентрация индия x последовательно увеличивалась на величину ~3.5%, достигая 24.5%. Затем выращивался компенсирующий слой с концентрацией x=28% и финальный бездислокационный слой с x=24.5%. Показано, что релаксация упругих напряжений с загибом дислокаций на интерфейсах происходит в третьем от поверхности слое, а верхний слой свободен от дислокаций на обоих интерфейсах. Квантовые точки формировались в метаморфной матрице посредством осаждения 2-2.5 монослоев InAs при 520oC с последующим заращиванием тонким слоем InGaAs при той же температуре роста. Установлено, что для улучшения структурного и оптического качества образцов необходимо увеличивать скорость роста и уменьшать концентрацию индия в покрывающем квантовые точки слое InGaAs, по отношению к соответствующим параметрам роста последнего подслоя метаморфного буфера. DOI: 10.21883/FTP.2017.05.44415.8459

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“…For emission at 1.3 µm the InAs dots are usually embedded in In x Ga 1-x As layers, according to the dot in a well (DWELL) concept [3]. Up to now most investigations of DWELLs are related to semiconductor lasers or to the optical properties of dot ensembles.…”

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Spectral characteristics of single InAs/InGaAs quantum dots in a quantum well

Worschech

Kaiser

Mensing

et al. 2003

phys. stat. sol. (c)

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Self assembled InAs quantum dots embedded in an InGaAs quantum well were grown by molecular beam epitaxy. At room temperature these dots in a well (DWELLS) have an emission wavelength of 1.3 µm. Small mesas with lateral sizes down to 200 × 200 nm 2 were fabricated by electron beam lithography and etching techniques. By photoluminescence spectroscopy at low temperatures we observe narrow lines, which we attribute to excitons and excitonic molecules. Biexciton binding energies ranging between 3.5-5 meV are found.1 Introduction There has been considerable interest in the development of gain material with layers of self assembled quantum dots emitting at telecommunication wavelength windows (1.3 and 1.55 µm) [1 -2]. For emission at 1.3 µm the InAs dots are usually embedded in In x Ga 1-x As layers, according to the dot in a well (DWELL) concept [3]. Up to now most investigations of DWELLs are related to semiconductor lasers or to the optical properties of dot ensembles. In contrast, there exists no information on the spectral characteristics of single dots.We have grown self assembled InAs quantum dots embedded in the center of an In 0.15 Ga 0.85 As quantum well by molecular beam epitaxy. Using electron beam lithography and wet etching techniques small mesas with only a few quantum dots were fabricated. At room temperature the quantum dots have an emission wavelength of 1.3 µm. By photoluminescence spectroscopy at low temperatures, we observe the emission lines of excitons and biexcitons in single dots. The assignment of exciton and biexciton recombination is based on the dependence of these states on the characteristic excitation power intensity. Biexciton binding energies ranging from 3.5 -5 meV are obtained for the present dots. Our studies demonstrate that single quantum dot spectroscopy can be carried out far beyond the Si CCD sensitivity range using InGaAs array detectors. This extends the number of systems accessible for single dot studies considerably, permitting, e.g., the study of single InAs/InAlGaAs/InP dashes or GaSb dots.

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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Cited by 230 publications

References 11 publications

Design and Realization of Novel GaAs Based Laser Concepts

Design and Realization of Novel GaAs Based Laser Concepts

Квантовые точки InAs, выращенные в метаморфной матрице In-=SUB=-0.25-=/SUB=-Ga-=SUB=-0.75-=/SUB=-As методом МОС-гидридной эпитаксии

Spectral characteristics of single InAs/InGaAs quantum dots in a quantum well

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