Optical characterisation of SIMOX structures formed by successive implantation and annealing

Pérez-Rodrı́guez, A.; Romano‐Rodríguez, A.; Macià, Josep; Morante, J.R.; Martín, Esther; Jiménez, J.

doi:10.1016/0168-583x(94)95769-x

Nuclear Instruments and Methods in Physics Research Section B:

1994

DOI: 10.1016/0168-583x(94)95769-x

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Optical characterisation of SIMOX structures formed by successive implantation and annealing

A. Pérez-Rodrı́guez¹,

A. Romano‐Rodríguez²,

Josep Macià³

et al.

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Cited by 4 publications

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“…The Si-O stretching peak position in the as-implanted samples toward lower frequencies compared to a typical thermal oxide (≈ 1080 cm -1 ) and also shifts toward lower frequencies at lower doses. The increasing of compressive stress of the BOX layers and the substochiometry of the oxide were proposed to describe these peak position shifts [4,5]. It was suggested that the peak position increase due to the increasing of stoichiometry in the oxide layer.…”

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Buried Oxide Formation in Low-Dose Low-Energy SIMOX

Jutarosaga

Jeoung

Seraphin³

2003

Microsc Microanal

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Low-dose, low-energy SIMOX (Separation by IMplanted OXygen) materials can reduce the production cost and also provide thinner top silicon and buried oxide (BOX) layers for smaller dimension electronic devices. However, it is more challenging to control the processing conditions since these layers are much thinner than those of conventional wafers. Several studies have shown that the defects in the top Si layer as well as in the BOX layer are influenced by the growth of the oxide precipitates during the implantation and the annealing processes [1][2][3]. The structural transformation of BOX layer including the Si-O bonding information is necessary to be investigated in order to understand and be able to control the quality of SIMOX structure. This study focuses on the investigation of the relationship between the structural transformation and the characteristics of the Si-O bonds in the as-implanted and annealed SIMOX samples. The effect of implanted oxygen doses and annealing condition on the structural transformation of the BOX layers was investigated using Transmission Electron Microscopy (TEM). In addition, the Si-O bonding in these SIMOX materials was evaluated based on their infrared absorption characteristics using Fourier Transform Infrared Spectroscopy (FTIR).

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confidence: 99%

Buried Oxide Formation in Low-Dose Low-Energy SIMOX

Jutarosaga

Jeoung

Seraphin³

2003

Microsc Microanal

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Infrared spectroscopy of Si–O bonding in low-dose low-energy separation by implanted oxygen materials

2005

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Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen

Ikarashi

Ogura

1998

Applied Physics Letters

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The formation process of buried oxide in low-dose oxygen-implanted wafers was investigated using Fourier-transform infrared absorption spectroscopy. In the wafers as-implanted with oxygen, the peak position of the Si–O–Si asymmetric stretching mode was observed to be lower in wave numbers for the lower dose samples, in which the oxygen atoms are buried as substoichiometric silicon oxide with small stress. Therefore, we conclude that the frequency shift is not caused by compressive stress but by the substoichiometry of the buried oxide. After annealing at over 600 °C, the buried oxide starts to form stoichiometric silicon dioxide, and completes it at over 1200 °C. However, we also found that some amount of oxygen atoms diffuse out of the wafer at a temperature over 1000 °C.

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Optical characterisation of SIMOX structures formed by successive implantation and annealing

Cited by 4 publications

References 10 publications

Buried Oxide Formation in Low-Dose Low-Energy SIMOX

Buried Oxide Formation in Low-Dose Low-Energy SIMOX

Infrared spectroscopy of Si–O bonding in low-dose low-energy separation by implanted oxygen materials

Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen

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