Optical characterisation of MOVPE-grown Ga1−Mn As semimagnetic semiconductor layers

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

“…Also for this excitation energy for Mn-doped NWs a new peak appears at the energy of about 1.41 eV. This is a well-known peak observed previously in (Ga,Mn)As 24,[30][31][32][33] and can be interpreted as a recombination via an acceptor level of the Mn impurity located in the Ga sublattice.…”

Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor

“…To our knowledge, there has been only one report of organometallic vapor phase epitaxy (OMVPE) of group III-arsenide DMS materials. 7 This report indicated that Ga 1-x Mn x As with x £ 0.01 can be grown between T g = 400-600∞C. The advantages of OMVPE include higher growth rates, versatility, and suitability for large area deposition.…”

Properties of InMnP (001) grown by MOVPE

“…For GaAs it is 7-8% and results in Curie temperatures up to 170 K. Such high incorporations are usually achieved in MBE (molecular beam epitaxy) using low-temperature growth (less than 250 C). Attempts to grow GaMnAs in MOVPE (metal-organic vapour phase epitaxy) resulted in the formation of Mn-rich clusters which were embedded defect free in the surrounding heavily Mn-doped GaAs matrix [2,3]. These clusters are ferromagnetic at room temperature, but do not induce spin polarization comparable to homogenous GaMnAs [3].…”