Optical centers and their depth distribution in electron irradiated CVD diamond

Зайцев, А.М.; Moe, Kyaw Soe; Wang, W.

doi:10.1016/j.diamond.2016.11.015

Cited by 34 publications

(26 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The high-energy irradiating particles knock carbon atoms out of the diamond lattice, creating both interstitial carbon atoms and monovacancies (D. Newton et al, 2002). Although theoretical calculations have not yet completely converged with experimental observations (Deák et al, 2014;Zaitsev, Moe, and Wang, 2017), the widely accepted model posits that, upon subsequent annealing (discussed in Sec. VI.E), diffusing vacancies are captured by substitutional nitrogen atoms, forming NV centers (Acosta et al, 2009).…”

Section: Electron Irradiationmentioning

confidence: 99%

Sensitivity optimization for NV-diamond magnetometry

et al. 2020

View full text Add to dashboard Cite

Solid-state spin systems including nitrogen-vacancy (NV) centers in diamond constitute an increasingly favored quantum sensing platform. However, present NV ensemble devices exhibit sensitivities orders of magnitude away from theoretical limits. The sensitivity shortfall both handicaps existing implementations and curtails the envisioned application space. This review analyzes present and proposed approaches to enhance the sensitivity of broadband ensemble-NV-diamond magnetometers. Improvements to the spin dephasing time, the readout fidelity, and the host diamond material properties are identified as the most promising avenues and are investigated extensively. This analysis of sensitivity optimization establishes a foundation to stimulate development of new techniques for enhancing solid-state sensor performance.

show abstract

Section: Electron Irradiationmentioning

confidence: 99%

Sensitivity optimization for NV-diamond magnetometry

et al. 2020

View full text Add to dashboard Cite

show abstract

“…atom in the nearest neighbor [28]. The emission lines at about 480 and 495 nm are assigned to N2 center (neutral nearest neighbor of two substitional N atoms) and H4 center (four substitional N atoms surrounding two lattice vacancies, 4N+2V) respectively [22,29].…”

Section: Photoluminescence Spectroscopymentioning

confidence: 99%

“…Also, the vacancies and N-related defects create deep energy levels within the forbidden energy gap and each such defect (known as color centers) emits photons at characteristic wavelength under suitable excitation. Thus, many investigations report on the identification of N induced point defects and N-related complex defects in diamonds through optical spectroscopic studies [22,23,24,25,26,27,28,29,30]…”

Section: Introductionmentioning

confidence: 99%

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

Ganesan¹,

Ajikumar²,

Srivastava³

et al. 2020

Diamond and Related Materials

View full text Add to dashboard Cite

Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film.Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X-ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm -1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N-related colour centres with multiple emission lines in the range of 380 -700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at ~ 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

show abstract

“…Другой актуальной задачей является исследование методов повышения концентрации NVцентров в уже выращенных CVD-слоях. Активно исследуются методы облучения электронным пучком [8,9], а также пучком ионов [10] Рост дельта-слоев, легированных азотом, проводился с помощью CVD-реактора, разработанного в ИПФ РАН, в котором быстрое переключение газов и ламинарный поток газов позволяют добиваться быстрой (за несколько секунд) смены газовой смеси в реакторе, что делает возможным рост легированных слоев с резкими границами, в том числе дельта-слоев толщиной 1−2 nm [11]. На НРНТ-подложке NV 5 нами был выращен эпитаксиальный слой с легированным азотом дельта-слоем на глубине 50 nm от его поверхности.…”

Section: поступило в редакцию 11 декабря 2018 г в окончательной редаunclassified

“…Далее образец подвергается отжигу при температуре > 800 • C для образования NV -центров в результате диффузии вакансий. В большинстве работ на эту тему изучалось облучение электронным пучком с высокими энергиями (2−3 MeV)[8]. При таком подходе облучается весь образец.…”

unclassified