Optical bistability of p-i-n and n-i-p-i structures at very low optical power

Kiesel, P.; Gulden, K.H.; Hoefler, A.; Kneissl, Michael; Knuepfer, Bernhard; Dankowski, S. U.; Riel, P.; Wu, Xuejian; Smith, J. S.; Weimann, G.; Doehler, Gottfried H.

doi:10.1117/12.162754

Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

DOI: 10.1117/12.162754

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Optical bistability of p-i-n and n-i-p-i structures at very low optical power

P. Kiesel¹,

K.H. Gulden²,

A. Hoefler³

et al.

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Cited by 8 publications

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“…With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor SLs composed of alternative layers of two different degenerate layers with controlled thickness. [20][21][22][23][24][25][26][27][28][29][30][31][32][33]. The investigations of the physical properties of narrow gap SLs have increased extensively, since they are important for optoelectronic devices and also since the quality of heterostructures involving narrow gap materials has been greatly improved.…”

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confidence: 99%

The EEM in Nipi Structures of Nonparabolic Semiconductors

Bhattacharya

Ghatak

2012

Effective Electron Mass in Low-Dimensional Semiconductors

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The concept of doping superlattices (SLs) was introduced by Esaki and Tsu [1] and extensive work in this subject was initiated by Dohler [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In the compositional SL the periodic potential is due to a change in the band gap of two materials. In doping SLs, the periodicity is space-charge induced and in addition a homogeneous material is used. With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor SLs composed of alternative layers of two different degenerate layers with controlled thickness. [20][21][22][23][24][25][26][27][28][29][30][31][32][33]. The investigations of the physical properties of narrow gap SLs have increased extensively, since they are important for optoelectronic devices and also since the quality of heterostructures involving narrow gap materials has been greatly improved. It may be noted that the nipi structures, also called the doping superlattices as mentioned above, are crystals with a periodic sequence of ultrathin film layers [19,20] of the same semiconductor with the intrinsic layer in between together with the opposite sign of doping. All the donors will be positively charged and all the acceptors negatively. This periodic space charge causes a periodic space charge potential which quantizes the motions of the carriers in the z-direction together with the formation of the subband energies.In Fig. 2.1a, the layers and the impurity types in different layers are shown. Electrons from neutral donors recombine with neutral acceptors, leaving behind a net space charge associated with ionized impurities. The concentration of the impurities is shown in Fig. 2.1b. The periodic potential is due to three terms:where, V H (z)is the Hartree potential of electrons and holes and V xc (z)is the exchange potential. The potential due to ionized impurities, V imp (z)is obtained from Poisson's equation:

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The EEM in Nipi Structures of Nonparabolic Semiconductors

Bhattacharya

Ghatak

2012

Effective Electron Mass in Low-Dimensional Semiconductors

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The ER in Doping Super Lattices of HD Non-parabolic Semiconductors

Ghatak

Bhattacharya

2014

Heavily-Doped 2d-Quantized Structures and the Einstein Relation

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The DR in Doping Superlattices of HD Non-parabolic Semiconductors Under Magnetic Quantization

Ghatak¹

2015

Springer Tracts in Modern Physics

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Optical bistability of p-i-n and n-i-p-i structures at very low optical power

Cited by 8 publications

References 0 publications

The EEM in Nipi Structures of Nonparabolic Semiconductors

The EEM in Nipi Structures of Nonparabolic Semiconductors

The ER in Doping Super Lattices of HD Non-parabolic Semiconductors

The DR in Doping Superlattices of HD Non-parabolic Semiconductors Under Magnetic Quantization

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