Light emitted when heating crystalline materials previously exposed to ionizing radiation is commonly known as thermoluminescence. The resultant glow curve is related to the material, the impurities and the defect centers generated by the irradiation. Several efforts have been made in the past to associate glow peaks with specific defect centers. Recently, in the case of LiF we established a link between F 3 + and F 3 centers and the temperature region of the glow curve below 200 °C. This result was obtained by using especially treated samples with known concentration of color centers in first place, and annealing measurements in second place. By continuing these studies, it has been possible to establish a further link between F 2 centers and a prominent feature of the glow curve near 260 °C. Although it is known that irradiated alkali halides release thermal energy when they are heated above the irradiation temperature, the inner mechanisms of the phenomenon is still the subject of debate. This is mostly due to the large number of the processes involved. Physical models of TL have been proposed by various authors [1][2][3]. The general scheme admits a discrete number of localized levels in the forbidden energy gap between the valence and conduction bands. Several levels below the bottom of the conduction band serve as electron traps, and by analogy several trapping levels for positive holes are assumed to be present above the valence band.On warming up the crystal, trapped carriers are being released from the localized levels, and recombine with trapped carriers of opposite sign. The crux of the TL debate is about the nature of the mobile entities which can be electrons or holes according to the Mayhugh model [2] or are interstitial halogen atoms according to the Spanish group of Alvarez Rivas [3]. The recombination process may be accompanied by the emission of photons in a series of glow peaks which contribute to the formation of the TL curve. In this connection the first step toward a basic understanding of the TL mechanism depends on the identification of the trapping and recombination centers. Electrons and holes trapped at defects, impurities and vacancies in the crystal normally introduce optical absorption (color centers, CCs) into the transparent crystal, because the defect energy levels lie in the forbidden gap of the of the insulating crystal. Therefore the filling and emptying of the TL traps should correlate with changes in the optical absorption bands, which can give information about the TL processes.