Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

“…Traditional plasma process has the discharge off period to wait for pumping out the particles from the gas phase, resulting in lower throughput. To date, we have successfully synthesized Si NPs and CNPs by using multi-hollow discharge plasma chemical vapor deposition (MHDPCVD), which can be produced continuously by employing fast gas flow [15][16][17][18][19][20][21][22][23]. In this method, the gas flow direction is uniform in the plasma region, and NPs are nucleated and grown in plasma.…”

“…NPs synthesis by the MHDPCVD method undergoes parametric tests such as dependence on gas pressure, gas flow rate, and gas composition, which are the external parameters [15][16][17][18][19][20][21][22][23][24]. Using the MHDPCVD, crystalline Si nanoparticles of 2 nm in size with 0.5 nm in size dispersion were produced for nanocrystalline amorphous silicon films for the third generation solar cells [15][16][17][18][19][20][21].…”

Spatial-Structure of Fluctuation of Amount of Nanoparticles in Amplitude-Modulated VHF Discharge Reactive Plasma

“…In addition, CVD plasma usually contains nanoparticles which could change the properties of films . In order to clarify the interaction fluctuations between reactive plasma and nanostructures, we have employed several methods such as an amplitude modulation (AM) method, an in-situ laser-light scattering (LLS) method and an envelope analysis [26][27][28][29][30][31][32][33][34][35][36].…”