“…17,18 To induce the creation of ion tracks and intermixing at interfaces, the electronic energy loss should be higher than a specific threshold (S e th ) that depends on the material properties (e.g., density and specific heat capacity). For GaN, the track formation threshold value is still under debate, with some contradictory values reported: (i) B15 keV nm À1 , 18 (ii) B17 keV nm À1 , 19 and (iii) higher than 22.8 keV nm À1 . 20 In addition to the possibility of QWI with an expected low density of point defects, the higher penetration depth of SHIs allows their implantation in the substrate instead of in the active region.…”