Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process

Yasuda, Tetsuji; Yamasaki, Satoshi; Nishizawa, Masatoyo; Miyata, Noriyuki; Shklyaev, A. A.; Ichikawa, Masakazu; Matsudo, Tatsuo; Ohta, Tomohiro

doi:10.1103/physrevlett.87.037403

Cited by 49 publications

(46 citation statements)

References 22 publications

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“…The H 2 O-induced oxidation of the Si(0 0 1) surface, however, starts with the uppermost Si dimers [4]. Bearing the different oxidation mechanisms in mind, the spectrum calculated here for the dimer-inserted model is actually in excellent agreement with the experiment of Yasuda et al [17].…”

supporting

confidence: 78%

“…This is characteristic for Si(0 0 1) surfaces where the second Si layer has been oxidized [17]. This result appears at first sight puzzling, because in the dimer-inserted model studied here (Fig.…”

mentioning

confidence: 77%

“…The application of RAS for surface structure determination requires the comparison of the measured spectrum with either data known from previous experiments or with spectra numerically simulated for candidate structures. The RAS features characteristic for clean, hydrogen-covered or oxidized Si(0 0 1) surfaces, for example, are well-known from experiments [13][14][15][16][17] and have been investigated computationally [18][19][20][21]. However, despite their ubiquity, to our knowledge the influence of water molecules on the optical properties of Si(0 0 1) has not been addressed yet by theory or experiment.…”

mentioning

confidence: 94%

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H2O on Si(0 0 1): surface optical anisotropy from first-principles calculations

Seino

Schmidt

2004

Surface Science

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supporting

confidence: 78%

mentioning

confidence: 77%

mentioning

confidence: 94%

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H2O on Si(0 0 1): surface optical anisotropy from first-principles calculations

Seino

Schmidt

2004

Surface Science

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“…For contactless optical characterization of the interface at nanometer scale the nontraditional methods of optical spectroscopy are used: linear optical reflectance differential spectroscopy (RDS), see [28][29][30][31] and references therein, and/or nonlinear optical spectroscopy of second harmonic generation. Development of the next generation of optical metrology will require the detailed interpretation of optical spectra based on microscopic modelling and simulations.…”

Section: Physics Research Internationalmentioning

confidence: 99%

Optical Second Harmonic Generation in Semiconductor Nanostructures

Murzina

Maydykovskiy

Гавриленко

et al. 2012

Physics Research International

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Optical second harmonic generation (SHG) studies of semiconductor nanostructures are reviewed. The second-order response data both predicted and observed on pure and oxidised silicon surfaces, planar Si(001)/SiO 2 heterostructures, and the results related to the direct-current-and strain-induced effects in SHG from the silicon surfaces as well are discussed. Remarkable progress in understanding the unique capabilities of nonlinear optical second harmonic generation spectroscopy as an advanced tool for nanostructures diagnostics is demonstrated.

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“…Their technological relevance for the microelectronic device industry has ensured that semiconductor-oxide interfaces have physically been characterized by a wide range of experimental techniques. In the case of the Si-SiO 2 interface, these include photoemission spectroscopy [11], ion-scattering [12][13][14], x-ray scattering [15,16], electron-energy-loss spectroscopy [17], transmission electron microscopy [18], electron spin resonance [19], photodiffraction spectroscopy [20], optical reflectance spectroscopy [21], and nonlinear optical spectroscopy [22]. The complexity and the wealth of the underlying physical phenomena set challenges to which the best theory and modelling should provide insight and guidance.…”

mentioning

confidence: 99%

Atomically controlled interfaces for future nanoelectronics

Pasquarello

Stoneham

2005

J. Phys.: Condens. Matter

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Online at stacks.iop.org/JPhysCM/17/V1Device miniaturization, speed of operation, and lower power demands are all responses to consumer needs. These driving forces are at the origin of the spectacular development of the microelectronic Si-based technology, characterized by an exponential scaling behaviour which has been persisting for over four decades [1].During this extended period of time, this technology has almost exclusively relied on the extremely convenient physical properties of the Si-SiO 2 interface, the interface between crystalline silicon and its thermal oxide [2,3]. In the present generation, gate-oxide layers are grown with thicknesses around 20 Å and with interfaces which are nearly abrupt at the atomic scale. Furthermore, specific nitrogen concentration profiles are engineered across the thin film to control the diffusion of dopants [3]. Further scaling of the Si-SiO 2 system is now prevented because of fundamental limits associated to leakage currents and reliability concerns [1]. Overcoming these limitations will require the use of alternative gate-oxide materials, of higher dielectric constant (high-κ materials) than SiO 2 [4]. The ability to control both the atomic structure and composition of these new oxide layers is emerging as one of the major challenges for the next generation of Si-based electronic devices. Controlling the atomic properties of thin dielectric films is currently becoming a relevant issue also for the development of oxide-based devices with other functional properties. Recent reports on surprising magnetic properties in oxides, including room-temperature ferromagnetism with giant magnetic moments, offer new perspectives for the development of magneto-optic and spin-electronic devices that could operate in ambient conditions [5][6][7]. The fundamental nature of the dielectric response in thin-film ferroelectric perovskite oxides is currently being addressed in view of identifying key materials for the development of novel random access memory technology [8]. Other relevant developments include the fabrication of field-effect transistors based on perovskite oxides as active elements [9] and atomically engineered hetero-oxide interfaces showing unusual charge states with surprisingly high carrier mobilities [10]. In all these developments, sophisticated oxide films play the central role.

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Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process

Cited by 49 publications

References 22 publications

H2O on Si(0 0 1): surface optical anisotropy from first-principles calculations

H2O on Si(0 0 1): surface optical anisotropy from first-principles calculations

Optical Second Harmonic Generation in Semiconductor Nanostructures

Atomically controlled interfaces for future nanoelectronics

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